Subsurface damage mechanism of high speed grinding process in single crystal silicon revealed by atomistic simulations

2015 ◽  
Vol 324 ◽  
pp. 464-474 ◽  
Author(s):  
Jia Li ◽  
Qihong Fang ◽  
Liangchi Zhang ◽  
Youwen Liu
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Damage Mechanism ◽  
Subsurface Damage ◽  
Atomistic Simulations ◽  
Grinding Process ◽  
Crystal Silicon ◽  
High Speed Grinding

Study on the vertical ultrasonic vibration-assisted nanomachining process on single-crystal silicon

2021 ◽  
pp. 1-29
Author(s):  
Jiqiang Wang ◽  
Yanquan Geng ◽  
Zihan Li ◽  
Yongda Yan ◽  
Xichun Luo ◽  
...  
Keyword(s):  
Single Crystal ◽  
Ultrasonic Vibration ◽  
Normal Load ◽  
Silicon Crystal ◽  
Brittle Materials ◽  
Single Crystal Silicon ◽  
Damage Mechanism ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Transmission Electron

Abstract Subsurface damage that is caused by mechanical machining is a major impediment to the widespread use of hard–brittle materials. Ultrasonic vibration-assisted macro- or micromachining could facilitate shallow subsurface damage compared with conventional machining. However, the subsurface damage that was induced by ultrasonic vibration-assisted nanomachining on hard–brittle silicon crystal has not yet been thoroughly investigated. In this study, we used a tip-based ultrasonic vibration-assisted nanoscratch approach to machine nanochannels on single-crystal silicon, to investigate the subsurface damage mechanism of the hard–brittle material during ductile-machining. The material removal state, morphology, and dimensions of the nanochannel, and the effect of subsurface damage on the scratch outcomes were studied. The materials were expelled in rubbing, plowing, and cutting mode in sequence with an increasing applied normal load and the silicon was significantly harder than the pristine material after plastic deformation. Transmission electron microscope analysis of the subsurface demonstrated that ultrasonic vibration-assisted nanoscratching led to larger subsurface damage compared with static scratching. The transmission electron microscopy results agreed with the Raman spectroscopy and molecular dynamic simulation. Our findings are important for instructing ultrasonic vibration-assisted machining of hard–brittle materials at the nanoscale level.

High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers

2006 ◽  
Vol 100 (1) ◽  
pp. 013708 ◽  
Author(s):  
Hao-Chih Yuan ◽  
Zhenqiang Ma ◽  
Michelle M. Roberts ◽  
Donald E. Savage ◽  
Max G. Lagally
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Thin Film Transistors ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Flexible Polymers ◽  
Silicon Thin Film ◽  
Crystal Silicon

Optimization of Cutting Parameters for High Speed End Milling of Single Crystal Silicon by Diamond Coated Tools with Compressed Air Blowing Using RSM

2012 ◽  
Vol 576 ◽  
pp. 46-50 ◽  
Author(s):  
M.A. Mahmud ◽  
A.K.M. Nurul Amin ◽  
M.D. Arif
Keyword(s):  
Single Crystal ◽  
High Speed ◽  
End Milling ◽  
Single Crystal Silicon ◽  
Depth Of Cut ◽  
Machining Parameters ◽  
Crystal Silicon ◽  
Design Expert ◽  
Coated Tools ◽  
Optimization Of Cutting Parameters

This paper presents the thorough experimental analysis on high speed end milling of single crystal silicon using diamond coated tools. Experiments were conducted on CNC milling machine. The design of the experiments was based on the central composite design (CCD) technique of Design Expert software. Response Surface Methodology (RSM) was used to develop mathematical imperial model to establish a correlation between machining parameters (cutting speed, feed and depth of cut) and machined surface roughness in high speed end milling of single crystal silicon using 2mm diameter diamond coated tools. The optimum machining parameters were determined using the optimization tool of Design Expert software based on the desirability function. Finally, confirmation tests were performed to validate the developed model.

Study on Precision Slicing Process of Single-Crystal Silicon by Using Dicing Wire Saw

2016 ◽  
Vol 1136 ◽  
pp. 350-356 ◽  
Author(s):  
Takaaki Suzuki ◽  
Toshinori Otsuki ◽  
Ji Wang Yan
Keyword(s):  
Single Crystal ◽  
High Precision ◽  
High Speed ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Wire Saw ◽  
Hard And Brittle Materials ◽  
Feeding Speed ◽  
Wire Feeding ◽  
Control Technologies

Precision slicing tests were performed for single-crystal silicon by using a newly developed dicing wire saw system and diamond wires. The developed dicing wire saw enables slicing thick workpiece of hard and brittle materials which could not be sliced by conventional dicing machines. To achieve high precision and efficiency, the dicing wire saw system adopted tension control and high speed control technologies which provides a maximum wire feeding speed of 2000m/min. In this study, the diamond wire was driven in a single direction at a speed of 750-1750m/min and the slicing force, wire wear and workpiece surface roughness after slicing were investigated experimentally. The results showed that as a new slicing system, the developed dicing wire saw was useable for high-precision slicing of thick workpiece.

Lubricating effect of graphene during ultra-precision mechanical polishing by atomic scale simulation

2021 ◽  
pp. 095440542110564
Author(s):  
Houfu Dai ◽  
Weilong Wu ◽  
Yang Hu
Keyword(s):  
Friction Coefficient ◽  
Potential Energy ◽  
Single Crystal ◽  
Solid Lubricant ◽  
Single Crystal Silicon ◽  
Subsurface Damage ◽  
Crystal Silicon ◽  
Energy Stress ◽  
Three Body ◽  
Diamond Abrasive

As a new two-dimensional material with unique friction and wear properties, graphene often serves as a solid lubricant. In order to better understand the lubrication effect of graphene in the process of three-body polishing of single crystal silicon with diamond abrasive, a molecular dynamics model of this process was established in this study. Further, the changes of coordination number, friction coefficient, temperature, potential energy, stress, and surface/subsurface damage in the process of three-body polishing were analyzed in detail. The results showed that graphene lubrication could enhance the heat dissipation and reduce the number of defect atoms, friction coefficient, potential energy, stress, and chips. Therefore, less subsurface damage and material resistance were observed in the workpiece with graphene lubrication during machining. In general, graphene can be used as a high-quality solid lubricant in the three-body polishing of single crystal silicon using diamond abrasive because of its excellent lubricating effect.

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