Fermi-level pinning position modulation by Al-containing metal gate for cost-effective dual-metal/dual-high-k CMOS

2007 ◽  
Author(s):  
M. Kadoshima ◽  
Y. Sugita ◽  
K. Shiraishi ◽  
H. Watanabe ◽  
A. Ohta ◽  
...  
Keyword(s):  
Fermi Level ◽  
Cost Effective ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
High K ◽  
Dual Metal

Fermi-Level Pinning at Metal/High-$k$ Interface Influenced by Electron State Density of Metal Gate

2010 ◽  
Vol 31 (10) ◽  
pp. 1101-1103 ◽  
Author(s):  
Z. C. Yang ◽  
A. P. Huang ◽  
X. H. Zheng ◽  
Z. S. Xiao ◽  
X. Y. Liu ◽  
...  
Keyword(s):  
Fermi Level ◽  
Electron State ◽  
State Density ◽  
Metal Gate ◽  
Fermi Level Pinning ◽  
Electron State Density ◽  
High K

Fermi level pinning by defects in HfO2-metal gate stacks

2007 ◽  
Vol 91 (13) ◽  
pp. 132912 ◽  
Author(s):  
J. Robertson ◽  
O. Sharia ◽  
A. A. Demkov
Keyword(s):  
Fermi Level ◽  
Gate Stacks ◽  
Metal Gate ◽  
Fermi Level Pinning

Interfaces of high-k dielectrics on GaAs: Their common features and the relationship with Fermi level pinning (Invited Paper)

2009 ◽  
Vol 86 (7-9) ◽  
pp. 1529-1535 ◽  
Author(s):  
Matty Caymax ◽  
Guy Brammertz ◽  
Annelies Delabie ◽  
Sonja Sioncke ◽  
Dennis Lin ◽  
...  
Keyword(s):  
Fermi Level ◽  
Common Features ◽  
Fermi Level Pinning ◽  
High K ◽  
The Relationship

Theory of Fermi Level Pinning of High-k Dielectrics

2006 ◽  
Author(s):  
Kenji Shiraishi ◽  
Yasushi Akasaka ◽  
Naoto Umezawa ◽  
Yasuo Nara ◽  
Keisaku Yamada ◽  
...  
Keyword(s):  
Fermi Level ◽  
Fermi Level Pinning ◽  
High K
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