Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
Latest Publications

TOTAL DOCUMENTS

163

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

0780382897

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

A 0.602 /spl mu/m/sup 2/ nestled 'Chain' cell structure formed by one mask etching process for 64 Mbit FeRAM

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345446 ◽

2004 ◽

Cited By ~ 8

Author(s):

H. Kanaya ◽

K. Tomioka ◽

T. Matsushita ◽

M. Omura ◽

T. Ozaki ◽

...

Keyword(s):

Cell Structure ◽

Etching Process ◽

Mask Etching

Download Full-text

Breaker page

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345448 ◽

2004 ◽

Download Full-text

SESSION 19 - Novel Device Concepts

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345475 ◽

2004 ◽

Keyword(s):

Novel Device

Download Full-text

Breaker page

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345487 ◽

2004 ◽

Download Full-text

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345386 ◽

2004 ◽

Cited By ~ 66

Author(s):

P.R. Chidambaram ◽

B.A. Smith ◽

L.H. Hall ◽

H. Bu ◽

S. Chakravarthi ◽

...

Keyword(s):

Gate Length ◽

Drive Current

Download Full-text

Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345423 ◽

2004 ◽

Cited By ~ 6

Author(s):

K. Torii ◽

T. Aoyama ◽

S. Kamiyama ◽

Y. Tamura ◽

S. Miyazaki ◽

...

Keyword(s):

Gate Dielectric ◽

Dielectric Breakdown ◽

Breakdown Mechanism

Download Full-text

45nm CMOS platform technology (CMOS6) with high density embedded memories

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345364 ◽

2004 ◽

Cited By ~ 7

Author(s):

M. Iwai ◽

A. Oishi ◽

T. Sanuki ◽

Y. Takegawa ◽

T. Komoda ◽

...

Keyword(s):

High Density ◽

Platform Technology ◽

Embedded Memories

Download Full-text

Breaker page

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345412 ◽

2004 ◽

Download Full-text

A 65nm-node LSTP (Low standby power) poly-Si/a-Si/HfSiON transistor with high I/sub on/-I/sub standby/ ratio and reliability

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345381 ◽

2004 ◽

Cited By ~ 6

Author(s):

Y. Yasuda ◽

N. Kimizuka ◽

T. Iwamoto ◽

S. Fujieda ◽

T. Ogura ◽

...

Keyword(s):

Standby Power

Download Full-text

Front Inside Cover [blank]

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004. ◽

10.1109/vlsit.2004.1345346 ◽

2004 ◽

Download Full-text

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A 0.602 /spl mu/m/sup 2/ nestled 'Chain' cell structure formed by one mask etching process for 64 Mbit FeRAM

Breaker page

SESSION 19 - Novel Device Concepts

Breaker page

35% drive current improvement from recessed-SiGe drain extensions on 37 nm gate length PMOS

Dielectric breakdown mechanism of HfSiON/SiO/sub 2/ gate dielectric

45nm CMOS platform technology (CMOS6) with high density embedded memories

Breaker page

A 65nm-node LSTP (Low standby power) poly-Si/a-Si/HfSiON transistor with high I/sub on/-I/sub standby/ ratio and reliability

Front Inside Cover [blank]

Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004.
Latest Publications