2006 International Conference on Simulation of Semiconductor Processes and Devices

A compact model for Phase Change Memories

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282863 ◽

2006 ◽

Cited By ~ 12

Author(s):

P. Fantini ◽

A. Benvenuti ◽

A. Pirovano ◽

F. Pellizzer ◽

D. Ventrice ◽

...

Keyword(s):

Phase Change ◽

Compact Model

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Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282848 ◽

2006 ◽

Cited By ~ 5

Author(s):

R. Tanabe ◽

Y. Ashizawa ◽

H. Oka

Keyword(s):

Three Dimensional ◽

Device Simulation ◽

Sram Cell ◽

Random Dopant Fluctuations ◽

Random Dopant

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Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282856 ◽

2006 ◽

Cited By ~ 1

Author(s):

Young Kim ◽

Matthew Ulrich ◽

Praveen Vaidyanathan ◽

Venkat Ananthan ◽

Chandra Mouli ◽

...

Keyword(s):

Low Power ◽

Signal Analysis ◽

Small Signal ◽

Small Signal Analysis

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Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282879 ◽

2006 ◽

Cited By ~ 1

Author(s):

G. Pennington ◽

S. Potbhare ◽

J. McGarrity ◽

N. Goldsman ◽

A. Lelis ◽

...

Keyword(s):

Electron Transport

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Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282851 ◽

2006 ◽

Author(s):

Ken'ichiro Sonoda ◽

Kiyoshi Ishikawa ◽

Takahisa Eimori ◽

Osamu Tsuchiya

Keyword(s):

Threshold Voltage ◽

Threshold Voltage Shift ◽

Voltage Shift ◽

Random Telegraph Signal

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A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282838 ◽

2006 ◽

Author(s):

Takako Okada

Keyword(s):

Monte Carlo ◽

Mechanical Stress ◽

Applied Voltage ◽

Crystal Orientation ◽

Tool Development

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3D Mesh Generation with Wavelet-Driven Adaptivity

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282874 ◽

2006 ◽

Cited By ~ 1

Author(s):

Luca Marchi ◽

Emanuele Baravelli ◽

Francesco Franze ◽

Nicolo Speciale

Keyword(s):

Mesh Generation ◽

3D Mesh

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Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282858 ◽

2006 ◽

Author(s):

Jinyu Zhang ◽

Yoshio Ashizawa ◽

Hideki Oka ◽

Chioko Kaneta ◽

Takahiro Yamazaki

Keyword(s):

Ab Initio ◽

Ab Initio Study ◽

Pile Up

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Modeling of High Frequency Noise in SiGe HBTs

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282888 ◽

2006 ◽

Author(s):

P. Sakalas ◽

A. Chakravorty ◽

M. Schroter ◽

M. Ramonas ◽

J. Herricht ◽

...

Keyword(s):

High Frequency ◽

Frequency Noise ◽

High Frequency Noise

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Grain Based Modeling of Stress Induced Copper Migration for 3D-IC Interwafer Vias

2006 International Conference on Simulation of Semiconductor Processes and Devices ◽

10.1109/sispad.2006.282906 ◽

2006 ◽

Cited By ~ 2

Author(s):

D.N. Bentz ◽

M.O. Bloomfield ◽

H. Huang ◽

J.-q Lu ◽

R. Gutmann ◽

...

Keyword(s):

3D Ic

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2006 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A compact model for Phase Change Memories

Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

3D Mesh Generation with Wavelet-Driven Adaptivity

Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

Modeling of High Frequency Noise in SiGe HBTs

Grain Based Modeling of Stress Induced Copper Migration for 3D-IC Interwafer Vias

Export Citation Format

2006 International Conference on Simulation of Semiconductor Processes and DevicesLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A compact model for Phase Change Memories

Investigation of SNM with Random Dopant Fluctuations for FD SGSOI and FinFET 6T SOI SRAM Cell by Three-dimensional Device Simulation

Small-Signal Analysis and Modeling of Asymmetric Source/Drain Parasitic Resistances for DRAM Access Transistors in Low-Power Applications

Electron Transport at Technologically Significant Stepped 4H-SiC/SiO2 Interfaces

Modeling of Discrete Dopant Effects on Threshold Voltage Shift by Random Telegraph Signal

A tool development of rigorous Schr�ger/Luttinger based Monte Carlo codes for scaled MOS studies in terms of crystal orientation, channel direction, mechanical stress and applied voltage

3D Mesh Generation with Wavelet-Driven Adaptivity

Ab initio Study of Boron Pile-up at the Si(001)/SiO2 Interface

Modeling of High Frequency Noise in SiGe HBTs

Grain Based Modeling of Stress Induced Copper Migration for 3D-IC Interwafer Vias

2006 International Conference on Simulation of Semiconductor Processes and Devices
Latest Publications