Low-Temperature Growth (400<tex>$^circhboxC$</tex>) of High-Integrity Thin Silicon–Oxynitride Films by Microwave-Excited High-Density Kr–O<tex>$_2$</tex>–<tex>$hboxNH_3$</tex>Plasma

2004 ◽  
Vol 32 (4) ◽  
pp. 1747-1751 ◽  
Author(s):  
K. Ohtsubo ◽  
Y. Saito ◽  
M. Hirayama ◽  
S. Sugawa ◽  
H. Aharoni ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Density ◽  
Silicon Oxynitride ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Silicon

Ultra-Thin Silicon Oxynitride Film Grown at Low-Temperature by Microwave-Excited High-Density Kr/O2/N2 Plasma

2000 ◽  
Author(s):  
Kazuo Ohtsubo ◽  
Yuji Saito ◽  
Katsuyuki Sekine ◽  
Masaki Hiramaya ◽  
Shigetoshi Sugawa ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Density ◽  
Silicon Oxynitride ◽  
Oxynitride Film ◽  
Thin Silicon ◽  
N2 Plasma

High‐density optical storage based on nanometer‐size arsenic clusters in low‐temperature‐growth GaAs

1992 ◽  
Vol 61 (26) ◽  
pp. 3098-3100 ◽  
Author(s):  
D. D. Nolte ◽  
M. R. Melloch ◽  
S. J. Ralph ◽  
J. M. Woodall
Keyword(s):  
Low Temperature ◽  
Optical Storage ◽  
High Density ◽  
Temperature Growth ◽  
Nanometer Size ◽  
Low Temperature Growth

Ultra Low-Temperature Growth of High-Integrity Thin Gate Oxide Films by Low-Energy Ion-Assisted Oxidation

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 900-902 ◽  
Author(s):  
Jinzo Watanabe ◽  
Yasuaki Kawai ◽  
Nobuhiro Konishi ◽  
Tadahiro Ohmi
Keyword(s):  
Low Temperature ◽  
Oxide Films ◽  
Gate Oxide ◽  
Low Energy ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
High Integrity ◽  
Thin Gate Oxide

Low-temperature growth of multiple-stack high-density ZnO nanoflowers/nanorods on plastic substrates

2012 ◽  
Vol 23 (48) ◽  
pp. 485606 ◽  
Author(s):  
Do Yeob Kim ◽  
Jae Young Kim ◽  
Hyuk Chang ◽  
Min Su Kim ◽  
Jae-Young Leem ◽  
...  
Keyword(s):  
Low Temperature ◽  
High Density ◽  
Temperature Growth ◽  
Plastic Substrates ◽  
Low Temperature Growth
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