Low temperature growth (400°C) of high-integrity thin silicon-oxynitride films by microwave-excited high-density Kr/O/sub 2//NH/sub 3/ plasma
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2004 ◽
Vol 32
(4)
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pp. 1747-1751
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2004 ◽
Vol 7
(4)
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pp. G62
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1995 ◽
Vol 34
(Part 1, No. 2B)
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pp. 900-902
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