Time-Resolved Scanning of Integrated Circuits With a Pulsed Laser: Application to Transient Fault Injection in an ADC

2004 ◽  
Vol 53 (4) ◽  
pp. 1227-1231 ◽  
Author(s):  
V. Pouget ◽  
D. Lewis ◽  
P. Fouillat
Keyword(s):  
Integrated Circuits ◽  
Fault Injection ◽  
Pulsed Laser ◽  
Laser Application ◽  
Transient Fault ◽  
Time Resolved

scholarly journals TFI-FTS: An efficient transient fault injection and fault-tolerant system for asynchronous circuits on FPGA platform

2021 ◽  
Vol 11 (3) ◽  
pp. 2704
Author(s):  
Sharath Kumar Y. N. ◽  
Dinesha P.
Keyword(s):  
Integrated Circuits ◽  
Digital Circuits ◽  
Fault Tolerant ◽  
Fault Injection ◽  
Asynchronous Circuits ◽  
Fault Coverage ◽  
Asynchronous Circuit ◽  
Hardware Complexity ◽  
Transient Fault ◽  
Fault Tolerant System

Designing VLSI digital circuits is challenging tasks because of testing the circuits concerning design time. The reliability and productivity of digital integrated circuits are primarily affected by the defects in the manufacturing process or systems. If the defects are more in the systems, which leads the fault in the systems. The fault tolerant systems are necessary to overcome the faults in the VLSI digital circuits. In this research article, an asynchronous circuits based an effective transient fault injection (TFI) and fault tolerant system (FTS) are modelled. The TFI system generates the faults based on BMA based LFSR with faulty logic insertion and one hot encoded register. The BMA based LFSR reduces the hardware complexity with less power consumption on-chip than standard LFSR method. The FTS uses triple mode redundancy (TMR) based majority voter logic (MVL) to tolerant the faults for asynchronous circuits. The benchmarked 74X-series circuits are considered as an asynchronous circuit for TMR logic. The TFI-FTS module is modeled using Verilog-HDL on Xilinx-ISE and synthesized on hardware platform. The Performance parameters are tabulated for TFI-FTS based asynchronous circuits. The performance of TFI-FTS Module is analyzed with 100% fault coverage. The fault coverage is validated using functional simulation of each asynchronous circuit with fault injection in TFI-FTS Module.

Root Cause Analysis Techniques Using Picosecond Time Resolved LADA

2014 ◽  
Author(s):  
Dan Bodoh ◽  
Kent Erington ◽  
Kris Dickson ◽  
George Lange ◽  
Carey Wu ◽  
...  
Keyword(s):  
Integrated Circuits ◽  
Picosecond Laser ◽  
Root Cause Analysis ◽  
Fault Isolation ◽  
Time Resolved ◽  
Cause Analysis ◽  
Root Cause ◽  
Design And Manufacturing ◽  
Multiple Interactions ◽  
Established Technique

Abstract Laser-assisted device alteration (LADA) is an established technique used to identify critical speed paths in integrated circuits. LADA can reveal the physical location of a speed path, but not the timing of the speed path. This paper describes the root cause analysis benefits of 1064nm time resolved LADA (TR-LADA) with a picosecond laser. It shows several examples of how picosecond TR-LADA has complemented the existing fault isolation toolset and has allowed for quicker resolution of design and manufacturing issues. The paper explains how TR-LADA increases the LADA localization resolution by eliminating the well interaction, provides the timing of the event detected by LADA, indicates the propagation direction of the critical signals detected by LADA, allows the analyst to infer the logic values of the critical signals, and separates multiple interactions occurring at the same site for better understanding of the critical signals.

Timing Sensitivity Analysis of Logical Nodes in Scan Design Integrated Circuits by Pulsed Diode Laser Stimulation

2008 ◽  
Author(s):  
T. Kiyan ◽  
C. Boit ◽  
C. Brillert
Keyword(s):  
Laser Pulse ◽  
Integrated Circuits ◽  
Continuous Wave ◽  
Fault Injection ◽  
Scan Design ◽  
Flip Flop ◽  
Laser Stimulation ◽  
Scan Chain ◽  
P Type ◽  
Scan Pattern

Abstract In this paper, a methodology based upon laser stimulation and a comparison of continuous wave and pulsed laser operation will be presented that localizes the fault relevant sites in a fully functional scan chain cell. The technique uses a laser incident from the backside to inject soft faults into internal nodes of a master-slave scan flip-flop in consequence of localized photocurrent. Depending on the illuminated type of the transistors (n- or p-type), injection of a logic ‘0’ or ‘1’ into the master or the slave stage of a flip-flop takes place. The laser pulse is externally triggered and can easily be shifted to various time slots in reference to clock and scan pattern. This feature of the laser diode allows triggering the laser pulse on the rising or the falling edge of the clock. Therefore, it is possible to choose the stage of the flip-flop in which the fault injection should occur. It is also demonstrated that the technique is able to identify the most sensitive signal condition for fault injection with a better time resolution than the pulse width of the laser, a significant improvement for failure analysis of integrated circuits.

scholarly journals Overheating In Silicon During Pulsed-Laser Irradiation?

1985 ◽  
Vol 51 ◽  
Author(s):  
B. C. Larson ◽  
J. Z. Tischler ◽  
D. M. Mills
Keyword(s):  
Laser Irradiation ◽  
Thermal Strain ◽  
Pulsed Laser ◽  
Interface Velocity ◽  
High Energy ◽  
Time Resolved ◽  
Synchrotron Source ◽  
Zero Velocity ◽  
The Difference ◽  
Pulsed Laser Irradiation

ABSTRACTNanosecond resolution time-resolved x-ray diffraction measurements of thermal strain have been used to measure the interface temperatures in silicon during pulsed-laser irradiation. The pulsed-time-structure of the Cornell High Energy Synchrotron Source (CHESS) was used to measure the temperature of the liquid-solid interface of <111> silicon during melting with an interface velocity of 11 m/s, at a time of near zero velocity, and at a regrowth velocity of 6 m/s. The results of these measurements indicate 110 K difference between the temperature of the interface during melting and regrowth, and the measurement at zero velocity shows that most of the difference is associated with undercooling during the regrowth phase.

scholarly journals Time-Resolved Quadrupole Mass Spectrometric Studies on Pulsed Laser Ablation of TiO2

1999 ◽  
Vol 18 (3) ◽  
pp. 99-109 ◽  
Author(s):  
Yongxin Tang ◽  
Zhenhui Han ◽  
Qizong Qin
Keyword(s):  
Laser Ablation ◽  
Continuous Wave ◽  
Center Of Mass ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Ionic Species ◽  
Mass Spectrometric ◽  
Quadrupole Mass ◽  
Time Resolved ◽  
Ambient Oxygen

Pulsed laser ablation of TiO2 at 355 nm and 532 nm has been investigated using an angleand time-resolved quadrupole mass spectrometric technique. The major ablated species include O (m/e = 16), O2 (m/e = 32), Ti (m/e = 48), TiO (m/e = 64) and TiO2 (m/e = 80). The time-of-flight (TOF) spectra of ablated species are measured for the ionic and neutral ablated species, and they can be fitted by a Maxwell – Boltzmann (M – B) distribution with a center-of-mass velocity. The measured angular distributions of the ionic species (O+ and Ti+) and the neutral species (O and Ti) can be fitted with cos⁡nθ and a cos⁡θ + (1−a)cos⁡nθ, respectively. In addition, a continuous wave oxygen molecular beam is introduced into the ablated plume, and the enhancement of the signal intensities of TiO is observed. It implies that the ablated Ti atoms/ions species can react with ambient oxygen molecules in the gas phase. In the meanwhile, the physicochemical mechanism of pulsed laser ablation of TiO2 is discussed.

Early Dynamics of a Laser-induced Underwater Shock Wave

2021 ◽  
Author(s):  
Guihua Lai ◽  
Siyuan Geng ◽  
Hanwen Zheng ◽  
Zhifeng Yao ◽  
Qiang Zhong ◽  
...  
Keyword(s):  
Shock Wave ◽  
Numerical Method ◽  
Cavitation Bubble ◽  
Laser Energy ◽  
Optical Breakdown ◽  
Pulsed Laser ◽  
Underwater Shock Wave ◽  
Time Resolved ◽  
High Attenuation ◽  
Nanosecond Pulsed Laser

Abstract The objective of this paper is to observe and investigate the early evolution of the shock wave, induced by a nanosecond pulsed laser in still water. A numerical method is performed to calculate the propagation of the shock wave within 1µs, after optical breakdown, based on the Gilmore model and the Kirkwood-Bethe hypothesis. The input parameters of the numerical method include the laser pulse duration, the size of the plasma and the maximally extended cavitation bubble, which are measured utilizing a high time-resolved shadowgraph system. The calculation results are verified by shock wave observation experiments at the cavitation bubble expansion stage. The relative errors of the radiuses and the velocity of the shock wave front, reach the maximum value of 45% at 5 ns after breakdown and decrease to less than 20% within 20 ns. The high attenuation characteristics of the shock wave after the optical breakdown, are predicted by the numerical method. The quick time and space evolution of the shock wave are carefully analyzed. The normalized shock wave width is found to be independent of the laser energy and duration, and the energy partitions ratio is around 2.0 using the nanosecond pulsed laser.

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