Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

2020 ◽  
pp. 1-4
Author(s):  
Shanjie Li ◽  
Zhiyuan He ◽  
Rui Gao ◽  
Yiqiang Chen ◽  
Yuan Chen ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Reverse Bias ◽  
Time Dependent ◽  
Voltage Instability ◽  
Gan Hemts ◽  
High Reverse Bias

Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

2019 ◽  
Vol 40 (8) ◽  
pp. 1253-1256 ◽  
Author(s):  
Loizos Efthymiou ◽  
Karthick Murukesan ◽  
Giorgia Longobardi ◽  
Florin Udrea ◽  
Ayman Shibib ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts ◽  
State Stress

Temperature and Time Dependent Threshold Voltage Instability in 4H-SiC Power DMOSFET Devices

2008 ◽  
Vol 600-603 ◽  
pp. 1147-1150 ◽  
Author(s):  
Marko J. Tadjer ◽  
Karl D. Hobart ◽  
Eugene A. Imhoff ◽  
Fritz J. Kub
Keyword(s):  
Threshold Voltage ◽  
Theoretical Calculations ◽  
Time Dependent ◽  
Measurement Scale ◽  
Interface Traps ◽  
Trapping Rate ◽  
Voltage Instability

Threshold voltage (Vth) was measured on 4H-SiC power DMOSFET devices as a function of temperature, gate stress, and gate stress time. Vth varied linearly with gate stress and gate stress time and inversely with temperature. This instability is explained with the trapping rate of channel electrons at or near the SiO2-SiC interface. Since the measurement scale of Vth is large in this case (it takes approx. 20 s to measure Vth), it is assumed that fast interface traps, i.e., ones closer to the interface, are already filled and do not contribute to the shift in Vth. Comparison with theoretical calculations shows the rate of carrier detrapping becomes higher with temperature and as a result the measured value of Vth approaches the theoretical value.

scholarly journals Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

2019 ◽  
Vol 40 (4) ◽  
pp. 518-521 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Stefaan Decoutere ◽  
Enrico Sangiorgi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Mg Doping ◽  
Voltage Instability ◽  
Gan Hemts ◽  
P Type

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

2019 ◽  
Author(s):  
Arno Stockman ◽  
Eleonora Canato ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
Peter Moens ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts

GaN HEMT Reliability: From Time Dependent Gate Degradation to On-state Failure Mechanisms

2012 ◽  
Vol 1432 ◽  
Author(s):  
Enrico Zanoni ◽  
Gaudenzio Meneghesso ◽  
Matteo Meneghini ◽  
Antonio Stocco
Keyword(s):  
Threshold Voltage ◽  
Reverse Bias ◽  
Strong Dependence ◽  
Failure Mechanisms ◽  
Time Dependent ◽  
Reliable Estimate ◽  
Hot Electron ◽  
State Tests ◽  
Gan Hemt ◽  
Electron Effects

ABSTRACTIn this paper, we compare degradation modes and failure mechanisms of different AlGaN/GaN HEMT technologies. We present data concerning reverse-bias degradation of GaN-based HEMTs, which results in a dramatic increase of gate leakage current, and present a timedependent model for gate degradation. Some of the tested technologies demonstrated to be immune from this failure mechanism up to drain-gate voltages in excess of 100 V. When this was the case, the main failure mode consisted of drain current degradation during on-state tests, resulting from charge trapping in the gate-drain access region attributed to hot-electron effects. Finally, the use of diagnostic techniques such as electroluminescence microscopy and Deep Level Transient Spectroscopy for the identification of failure modes and mechanisms of GaNbased HEMTs is reviewed. Concerning reverse-bias degradation of GaN-based HEMTs, we demonstrate that, (i) when submitted to reverse-gate stress, HEMTs can show both recoverable and permanent degradation. (ii) recoverable degradation consists of a decrease in gate current and threshold voltage, which are ascribed to the simultaneous trapping of negative charge in the AlGaN layer, and of positive charge close to the AlGaN/GaN interface. (iii) permanent degradation is manifested by the generation of parasitic leakage paths. Time-dependent analysis suggests that permanent degradation can be ascribed to a defect generation and percolation process. Results supports the existence of a time to breakdown for HEMT degradation, which significantly depends on the stress voltage level. On the contrary, AlGaN/GaN technologies which were found to be resistant to gate degradation (off-state critical voltage larger than 100 V for a 0.25 um gate device) were subjected to on-state tests at different gate and drain voltage levels. All tests showed a non-recoverable degradation of electrical parameters (drain saturation current, threshold voltage and on-state resistance) and electroluminescence signal EL, with a strong dependence on the EL value of the bias point, and a negligible dependence of temperature. Once verified that EL intensity represents a reliable estimate of channel hot electron effects, we attributed the degradation to hot electron trapping in the gate-drain access region. Using EL intensity as a measure of the stress acceleration factor, we derived an acceleration law for GaN HEMT hot electron degradation similar to the one already demonstrated for GaAs devices.

Threshold voltage instability in AlGaN/GaN HEMTs

2015 ◽  
Author(s):  
Ting-Fu Chang ◽  
Tsung-Chieh Hsiao ◽  
Szu-Han Huang ◽  
Chih-Fang Huang ◽  
Yun-Hsiang Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts
Sign in / Sign up

Export Citation Format

Share Document