Silicon Nitride-induced Threshold Voltage Shift in p-GaN HEMTs with Au-free Gate-first Process

2020 ◽  
Author(s):  
Yi-Cheng Chen ◽  
Shun-Wei Tang ◽  
Pin-Hau Lin ◽  
Zheng-Chen Chen ◽  
Ming-Hao Lu ◽  
...  
Keyword(s):  
Silicon Nitride ◽  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gan Hemts

COMPARATIVE INSTABILITIES ANALYSIS FOR a-Si:H BODY-TIED TFT (BT-TFT) AND FLOATING BODY TFT (FB-TFT) UNDER BIAS TEMPERATURE STRESSING (BTS)

2008 ◽  
Vol 22 (05) ◽  
pp. 337-341
Author(s):  
YONG K. LEE ◽  
SUNG-HOON CHOA
Keyword(s):  
Silicon Nitride ◽  
Threshold Voltage ◽  
Gate Insulator ◽  
Floating Body ◽  
Negative Bias ◽  
Positive Bias ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Bias Stress ◽  
Hole Trapping

The a- Si:H thin film transistors TFT with silicon nitride as a gate insulator have been stressed with negative and positive bias to realize the instability mechanisms. With proposed BT-TFT and FB-TFT devices, it is found that the threshold voltages of both BT-TFT and BT-TFT devices are positively shifted under positive bias stress and then negatively shifted for negative bias stress. The positive threshold voltage shift is due to the electron trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The negative threshold voltage shift is mainly due to hole trapping and/or electron de-trapping in the silicon nitride or at the a- Si:H /silicon nitride interface. The positive or negative threshold voltage shift keeps increasing with increasing positive or negative gate bias for both BT-TFT and FB-TFT devices. However, as far as the threshold voltage shift slope is concerned, under positive bias stress, both BT-TFT and FB-TFT devices are similar to each other. On the other hand, under negative bias stress, BT-TFT shift amount is much less than one for the FB-TFT device.

Positive Threshold Voltage Shift in AlGaN/GaN HEMTs and E-Mode Operation By ${\mathrm{Al}}_{x}{\mathrm{Ti}}_{1-x}$ O Based Gate Stack Engineering

2019 ◽  
Vol 66 (6) ◽  
pp. 2544-2550 ◽  
Author(s):  
Sayak Dutta Gupta ◽  
Ankit Soni ◽  
Vipin Joshi ◽  
Jeevesh Kumar ◽  
Rudrarup Sengupta ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Gate Stack ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Mode Operation ◽  
Positive Threshold ◽  
Gan Hemts

Over 1200 V Normally-OFF p-NiO gated AlGaN/GaN HEMTs on Si with a Small Threshold Voltage Shift

2021 ◽  
pp. 1-1
Author(s):  
Hui Guo ◽  
Hehe Gong ◽  
Pengfei Shao ◽  
Xinxin Yu ◽  
Jin Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Gan Hemts

scholarly journals Analysis of Threshold Voltage Shift for Full VGS/VDS/Oxygen-Content Span under Positive Bias Stress in Bottom-Gate Amorphous InGaZnO Thin-Film Transistors

Micromachines ◽  
2021 ◽  
Vol 12 (3) ◽  
pp. 327
Author(s):  
Je-Hyuk Kim ◽  
Jun Tae Jang ◽  
Jong-Ho Bae ◽  
Sung-Jin Choi ◽  
Dong Myong Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Electric Field ◽  
Oxygen Content ◽  
Threshold Voltage ◽  
Thin Film Transistors ◽  
Electron Trapping ◽  
Threshold Voltage Shift ◽  
Voltage Shift ◽  
Drain Side ◽  
Bottom Gate

In this study, we analyzed the threshold voltage shift characteristics of bottom-gate amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) under a wide range of positive stress voltages. We investigated four mechanisms: electron trapping at the gate insulator layer by a vertical electric field, electron trapping at the drain-side GI layer by hot-carrier injection, hole trapping at the source-side etch-stop layer by impact ionization, and donor-like state creation in the drain-side IGZO layer by a lateral electric field. To accurately analyze each mechanism, the local threshold voltages of the source and drain sides were measured by forward and reverse read-out. By using contour maps of the threshold voltage shift, we investigated which mechanism was dominant in various gate and drain stress voltage pairs. In addition, we investigated the effect of the oxygen content of the IGZO layer on the positive stress-induced threshold voltage shift. For oxygen-rich devices and oxygen-poor devices, the threshold voltage shift as well as the change in the density of states were analyzed.

Threshold-Voltage-Shift Mechanism in Pentacene Field Effect Transistors Caused by Photoirradiation

2008 ◽  
Vol 47 (4) ◽  
pp. 3189-3192 ◽  
Author(s):  
Chang Bum Park ◽  
Takamichi Yokoyama ◽  
Tomonori Nishimura ◽  
Koji Kita ◽  
Akira Toriumi
Keyword(s):  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Threshold Voltage Shift ◽  
Voltage Shift
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