2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications

TOTAL DOCUMENTS

136

(FIVE YEARS 0)

H-INDEX

(FIVE YEARS 0)

Published By IEEE

9781728105802, 9781728105819

Latest Documents Most Cited Documents Contributed Authors Related Sources Related Keywords

Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757564 ◽

2019 ◽

Author(s):

Thomas Ziemann ◽

Alexander Tsibizov ◽

Bhagyalakshmi Kakarla ◽

Lorenz Bort ◽

Ulrike Grossner

Keyword(s):

Failure Analysis ◽

Short Circuit ◽

Time Resolved

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Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757660 ◽

2019 ◽

Author(s):

Yuru Wang ◽

Jin Wei ◽

Song Yang ◽

Jiacheng Lei ◽

Mengyuan Hua ◽

...

Keyword(s):

Schottky Type

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Author Index

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757608 ◽

2019 ◽

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General Chair's Message

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757679 ◽

2019 ◽

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Influence of Carrier Lifetime on Silicon Carbide Power Devices for Pulsed Power Application

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757643 ◽

2019 ◽

Author(s):

Kun Zhou ◽

Yingxing Cui ◽

Lianghui Li ◽

Yunfei Gu ◽

Lin Zhang ◽

...

Keyword(s):

Silicon Carbide ◽

Carrier Lifetime ◽

Pulsed Power ◽

Power Devices ◽

Power Application

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Feasibility and Limitation of DC/DC Multilevel Converter Power ICs Using Standard CMOS Transistors

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757654 ◽

2019 ◽

Cited By ~ 2

Author(s):

Runtao Ning ◽

Yuanfeng Zhou ◽

Aritra Kundu ◽

Z. John Shen

Keyword(s):

Multilevel Converter ◽

Cmos Transistors

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Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757666 ◽

2019 ◽

Cited By ~ 1

Author(s):

Anup Bhalla ◽

Melvin Nava ◽

Mike Zhu ◽

Frank Sudario ◽

Deborah Sumaoang ◽

...

Keyword(s):

High Speed ◽

Short Circuit ◽

Ultra High Speed

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An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757637 ◽

2019 ◽

Author(s):

Gaoqiang Deng ◽

Xiaorong Luo ◽

Diao Fan ◽

Tao Sun ◽

Bo Zhang

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Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757628 ◽

2019 ◽

Cited By ~ 7

Author(s):

Ruito Aiba ◽

Masataka Okawa ◽

Taiga Kanamori ◽

Hiroshi Yano ◽

Noriyuki Iwamuro ◽

...

Keyword(s):

Experimental Demonstration ◽

Switching Characteristics

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Over Kilovolt GaN Vertical Super-Junction Trench MOSFET: Approach for Device Design and Optimization

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757688 ◽

2019 ◽

Cited By ~ 1

Author(s):

Peng Huang ◽

Qi Zhou ◽

Kuangli Chen ◽

Xiaoqi Han ◽

Dong Wei ◽

...

Keyword(s):

Device Design ◽

Design And Optimization

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2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Time-Resolved Short Circuit Failure Analysis of SiC MOSFETs

Characterization of Dynamic $I_{\text{OFF}}$ in Schottky-Type $p$-GaN Gate HEMTs

Author Index

General Chair's Message

Influence of Carrier Lifetime on Silicon Carbide Power Devices for Pulsed Power Application

Feasibility and Limitation of DC/DC Multilevel Converter Power ICs Using Standard CMOS Transistors

Ultra-high speed 7mohm, 650V SiC half-bridge module with robust short circuit capability for EV inverters

An Injection Enhanced LIGBT on Thin SOI Layer with Low ON-state Voltage

Experimental Demonstration on Superior Switching Characteristics of 1.2 kV SiC SWITCH-MOS

Over Kilovolt GaN Vertical Super-Junction Trench MOSFET: Approach for Device Design and Optimization

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD)
Latest Publications