high reverse bias Latest Research Papers

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

IEEE Transactions on Electron Devices ◽

10.1109/ted.2020.3039766 ◽

2020 ◽

pp. 1-4

Author(s):

Shanjie Li ◽

Zhiyuan He ◽

Rui Gao ◽

Yiqiang Chen ◽

Yuan Chen ◽

...

Keyword(s):

Threshold Voltage ◽

Reverse Bias ◽

Time Dependent ◽

Voltage Instability ◽

Gan Hemts ◽

High Reverse Bias

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Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress

2019 31st International Symposium on Power Semiconductor Devices and ICs (ISPSD) ◽

10.1109/ispsd.2019.8757652 ◽

2019 ◽

Author(s):

Zheyang Zheng ◽

Mengyuan Hua ◽

Jin Wei ◽

Zhaofu Zhang ◽

Kevin J. Chen

Keyword(s):

Reverse Bias ◽

Bias Stress ◽

High Reverse Bias

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High reverse bias hydrogen gas sensor based on zinc oxide nanorods

Materials Today Proceedings ◽

10.1016/j.matpr.2018.12.058 ◽

2019 ◽

Vol 7 ◽

pp. 661-667

Author(s):

Choo Thye Foo ◽

Nur Ubaidah Saidin ◽

Kok Kuan Ying

Keyword(s):

Zinc Oxide ◽

Gas Sensor ◽

Reverse Bias ◽

Hydrogen Gas ◽

Zinc Oxide Nanorods ◽

Oxide Nanorods ◽

High Reverse Bias

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Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltage

Applied Physics Express ◽

10.7567/apex.11.091302 ◽

2018 ◽

Vol 11 (9) ◽

pp. 091302 ◽

Cited By ~ 5

Author(s):

Takuya Maeda ◽

Xilun Chi ◽

Masahiro Horita ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Optical Absorption ◽

Bias Voltage ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

Junction Diode ◽

Franz Keldysh Effect ◽

High Reverse Bias

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Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Applied Physics Letters ◽

10.1063/1.5031215 ◽

2018 ◽

Vol 112 (25) ◽

pp. 252104 ◽

Cited By ~ 10

Author(s):

Takuya Maeda ◽

Tetsuo Narita ◽

Masakazu Kanechika ◽

Tsutomu Uesugi ◽

Tetsu Kachi ◽

...

Keyword(s):

Bias Voltage ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

Junction Diode ◽

Franz Keldysh Effect ◽

High Reverse Bias

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Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Chinese Physics B ◽

10.1088/1674-1056/26/8/087308 ◽

2017 ◽

Vol 26 (8) ◽

pp. 087308 ◽

Cited By ~ 1

Author(s):

Linna Zhao ◽

Peihong Yu ◽

Zixiang Guo ◽

Dawei Yan ◽

Hao Zhou ◽

...

Keyword(s):

Reverse Bias ◽

Bias Stress ◽

High Reverse Bias

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Erratum: “Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”

Applied Physics Express ◽

10.7567/apex.9.109201 ◽

2016 ◽

Vol 9 (10) ◽

pp. 109201 ◽

Cited By ~ 1

Author(s):

Takuya Maeda ◽

Masaya Okada ◽

Masaki Ueno ◽

Yoshiyuki Yamamoto ◽

Masahiro Horita ◽

...

Keyword(s):

Schottky Barrier ◽

Bias Voltage ◽

Reverse Bias ◽

Schottky Barrier Diode ◽

Reverse Bias Voltage ◽

Franz Keldysh Effect ◽

High Reverse Bias

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Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

Applied Physics Express ◽

10.7567/apex.9.091002 ◽

2016 ◽

Vol 9 (9) ◽

pp. 091002 ◽

Cited By ~ 3

Author(s):

Takuya Maeda ◽

Masaya Okada ◽

Masaki Ueno ◽

Yoshiyuki Yamamoto ◽

Masahiro Horita ◽

...

Keyword(s):

Schottky Barrier ◽

Bias Voltage ◽

Reverse Bias ◽

Schottky Barrier Diode ◽

Reverse Bias Voltage ◽

Franz Keldysh Effect ◽

High Reverse Bias

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Modelling of the electrochemical etch stop with high reverse bias across pn-junctions

2015 26th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) ◽

10.1109/asmc.2015.7164437 ◽

2015 ◽

Author(s):

Robert Szwarc ◽

Lothar Frey ◽

Hans Weber ◽

Iris Moder ◽

Tobias Erlbacher ◽

...

Keyword(s):

Reverse Bias ◽

Etch Stop ◽

Pn Junctions ◽

High Reverse Bias

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Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage

Physics of Semiconductor Devices - Environmental Science and Engineering ◽

10.1007/978-3-319-03002-9_227 ◽

2014 ◽

pp. 881-883

Author(s):

Vanya Srivastav ◽

Navneet Kaur Saini ◽

L. Sareen ◽

R. K. Bhan ◽

R. K. Sharma

Keyword(s):

Bias Voltage ◽

Reverse Bias ◽

Reverse Bias Voltage ◽

Current Voltage ◽

Current Voltage Characteristics ◽

High Reverse Bias

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high reverse bias
Recently Published Documents

TOTAL DOCUMENTS

H-INDEX

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress

High reverse bias hydrogen gas sensor based on zinc oxide nanorods

Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltage

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Erratum: “Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

Modelling of the electrochemical etch stop with high reverse bias across pn-junctions

Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage

Export Citation Format

high reverse biasRecently Published Documents

TOTAL DOCUMENTS

H-INDEX

Time-Dependent Threshold Voltage Instability Mechanisms of p-GaN Gate AlGaN/GaN HEMTs Under High Reverse Bias Conditions

Identifying the Location of Hole-Induced Gate Degradation in $\text{LPCVD} -\text{SiN}_{x}/\text{GaN}$ MIS-FETs under High Reverse-Bias Stress

High reverse bias hydrogen gas sensor based on zinc oxide nanorods

Phonon-assisted optical absorption due to Franz–Keldysh effect in 4H-SiC p–n junction diode under high reverse bias voltage

Franz-Keldysh effect in GaN p-n junction diode under high reverse bias voltage

Progressive current degradation and breakdown behavior in GaN LEDs under high reverse bias stress

Erratum: “Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage”

Franz–Keldysh effect in n-type GaN Schottky barrier diode under high reverse bias voltage

Modelling of the electrochemical etch stop with high reverse bias across pn-junctions

Modeling Current Voltage Characteristics of MWIR HgCdTe Diodes at High Reverse Bias Voltage

high reverse bias
Recently Published Documents