Understanding the Threshold Voltage Instability During OFF-State Stress in p-GaN HEMTs

2019 ◽  
Vol 40 (8) ◽  
pp. 1253-1256 ◽  
Author(s):  
Loizos Efthymiou ◽  
Karthick Murukesan ◽  
Giorgia Longobardi ◽  
Florin Udrea ◽  
Ayman Shibib ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts ◽  
State Stress

scholarly journals Threshold Voltage Instability in GaN HEMTs With p-Type Gate: Mg Doping Compensation

2019 ◽  
Vol 40 (4) ◽  
pp. 518-521 ◽  
Author(s):  
Andrea Natale Tallarico ◽  
Steve Stoffels ◽  
Niels Posthuma ◽  
Stefaan Decoutere ◽  
Enrico Sangiorgi ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Mg Doping ◽  
Voltage Instability ◽  
Gan Hemts ◽  
P Type

Threshold Voltage Instability Mechanisms in p-GaN Gate AlGaN/GaN HEMTs

2019 ◽  
Author(s):  
Arno Stockman ◽  
Eleonora Canato ◽  
Matteo Meneghini ◽  
Gaudenzio Meneghesso ◽  
Peter Moens ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts

Implications of Threshold-Voltage Instability on SiC DMOSFET Operation

2009 ◽  
Vol 615-617 ◽  
pp. 809-812 ◽  
Author(s):  
Aivars J. Lelis ◽  
Daniel B. Habersat ◽  
Ronald Green ◽  
Neil Goldsman
Keyword(s):  
Threshold Voltage ◽  
Gate Voltage ◽  
Room Temperature ◽  
Power Converter ◽  
Voltage Instability ◽  
Low Field ◽  
Percent Increase ◽  
Field Bias ◽  
State Resistance ◽  
State Stress

Although recent fast I-V measurements and subthreshold analysis reveal that the threshold-voltage instability due to low-field bias stressing at room temperature is greater than previously reported when calculated using slower, standard measurements by a parameter analyzer—a result that is consistent with electrons directly tunneling into and out of near interfacial oxide traps, this effect will not prevent the use of power SiC DMOSFET switches in power converter applications if certain precautions are followed. Namely, if the threshold voltage is set high enough so that a negative shift in threshold voltage will not increase the leakage current in the off-state, then the primary effect will be to increase the on-state resistance by decreasing the effective gate voltage. The instability due to ON-state stressing is greater than that for bias stressing alone, but not significantly. For a well behaved device, a 1-hour ON-state stress will result in about a 7 percent increase in conduction losses, which is manageable for power converter applications.

Threshold voltage instability in AlGaN/GaN HEMTs

2015 ◽  
Author(s):  
Ting-Fu Chang ◽  
Tsung-Chieh Hsiao ◽  
Szu-Han Huang ◽  
Chih-Fang Huang ◽  
Yun-Hsiang Wang ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Voltage Instability ◽  
Gan Hemts
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