Computer techniques for solving metal-semiconductor barrier height. Application to Au - CdS thin-film Schottky diodes

1975 ◽  
Vol 122 (11) ◽  
pp. 1193 ◽  
Author(s):  
P.H. Nguyen ◽  
B. Lepley ◽  
A. Nadeau ◽  
S. Ravelet
Keyword(s):  
Thin Film ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Cds Thin Film

Improved CdS thin film schottky diodes

1970 ◽  
Vol 3 (2) ◽  
pp. K105-K107 ◽  
Author(s):  
D. Bonnet ◽  
H. Rabenhorst
Keyword(s):  
Thin Film ◽  
Schottky Diodes ◽  
Cds Thin Film

Results on heat treated AuCdS and CuCdS thin film schottky diodes

1974 ◽  
Vol 22 (2) ◽  
pp. K191-K194 ◽  
Author(s):  
B. Lepley ◽  
S. Ravelet ◽  
P. Renard
Keyword(s):  
Thin Film ◽  
Schottky Diodes ◽  
Heat Treated ◽  
Cds Thin Film

Electrical Properties of RF Sputtered CdTe/CdS Thin Film Solar Cells

2009 ◽  
Vol 2 (1) ◽  
pp. 110-112 ◽  
Author(s):  
Sheeja Krishnan ◽  
Ganesh Sanjeev ◽  
Manjunatha Pattabi ◽  
X. Mathew
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Electrical Properties ◽  
Thin Film Solar Cells ◽  
Cds Thin Film

Solution-processed pure Cu2ZnSnS4/CdS thin film solar cell with 7.5% efficiency

2021 ◽  
Vol 114 ◽  
pp. 110947
Author(s):  
Eka Cahya Prima ◽  
Lydia Helena Wong ◽  
Ahmad Ibrahim ◽  
Nugraha ◽  
Brian Yuliarto
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Thin Film Solar Cell ◽  
Solution Processed ◽  
Cds Thin Film

scholarly journals A Study about Schottky Barrier Height and Ideality Factor in Thin Film Transistors with Metal/Zinc Oxide Nanoparticles Structures Aiming Flexible Electronics Application

Nanomaterials ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 1188
Author(s):  
Ivan Rodrigo Kaufmann ◽  
Onur Zerey ◽  
Thorsten Meyers ◽  
Julia Reker ◽  
Fábio Vidor ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Flexible Electronics ◽  
Thin Film Transistors ◽  
Zinc Oxide Nanoparticles ◽  
Schottky Barrier Height ◽  
Oxide Nanoparticles ◽  
Semiconductor Interfaces

Zinc oxide nanoparticles (ZnO NP) used for the channel region in inverted coplanar setup in Thin Film Transistors (TFT) were the focus of this study. The regions between the source electrode and the ZnO NP and the drain electrode were under investigation as they produce a Schottky barrier in metal-semiconductor interfaces. A more general Thermionic emission theory must be evaluated: one that considers both metal/semiconductor interfaces (MSM structures). Aluminum, gold, and nickel were used as metallization layers for source and drain electrodes. An organic-inorganic nanocomposite was used as a gate dielectric. The TFTs transfer and output characteristics curves were extracted, and a numerical computational program was used for fitting the data; hence information about Schottky Barrier Height (SBH) and ideality factors for each TFT could be estimated. The nickel metallization appears with the lowest SBH among the metals investigated. For this metal and for higher drain-to-source voltages, the SBH tended to converge to some value around 0.3 eV. The developed fitting method showed good fitting accuracy even when the metallization produced different SBH in each metal-semiconductor interface, as was the case for gold metallization. The Schottky effect is also present and was studied when the drain-to-source voltages and/or the gate voltage were increased.

Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Heterojunction Solar Cells ◽  
Term Stability ◽  
Long Term Stability ◽  
Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

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