Temperature dependence of the barrier height of Pt/n-GaAs Schottky diodes

1998 ◽  
Vol 84 (9) ◽  
pp. 5326-5330 ◽  
Author(s):  
H.-W. Hübers ◽  
H. P. Röser
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diodes

On the temperature dependence of the barrier height and the ideality factor in high voltage NinGaAs schottky diodes

1996 ◽  
Vol 39 (10) ◽  
pp. 1457-1462 ◽  
Author(s):  
M. Nathan ◽  
Z. Shoshani ◽  
G. Ashkinazi ◽  
B. Meyler ◽  
O. Zolotarevski
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
High Voltage ◽  
Ideality Factor ◽  
Schottky Diodes

A BEEM study of the temperature dependence of the barrier height distribution in PtSi/n-Si Schottky diodes

1999 ◽  
Vol 112 (11) ◽  
pp. 611-615 ◽  
Author(s):  
S. Zhu ◽  
R.L. Van Meirhaeghe ◽  
C. Detavernier ◽  
G.-P. Ru ◽  
B.-Z. Li ◽  
...  
Keyword(s):  
Temperature Dependence ◽  
Barrier Height ◽  
Schottky Diodes ◽  
Height Distribution

Barrier height inhomogeneity and its impact on (Al,In,Ga)N Schottky diodes

2016 ◽  
Vol 119 (6) ◽  
pp. 064501 ◽  
Author(s):  
Matthew A. Laurent ◽  
Geetak Gupta ◽  
Donald J. Suntrup ◽  
Steven P. DenBaars ◽  
Umesh K. Mishra
Keyword(s):  
Barrier Height ◽  
Schottky Diodes

Barrier height and current passage mechanisms in Schottky diodes based in Mn x Hg 1-x Te

2001 ◽  
Author(s):  
Andrey V. Markov ◽  
Oksana O. Bodnaruk ◽  
O. V. Lazareva ◽  
Sergey E. Ostapov ◽  
Ilary M. Rarenko ◽  
...  
Keyword(s):  
Barrier Height ◽  
Schottky Diodes ◽  
Current Passage

High Barrier Height n-GaN Schottky diodes with a barrier height of 1.3 eV by using sputtered copper metal

1999 ◽  
Vol 572 ◽  
Author(s):  
W. C. Lai ◽  
M. Yokoyama ◽  
C. Y. Chang ◽  
J. D. Guo ◽  
J. S. Tsang ◽  
...  
Keyword(s):  
Barrier Height ◽  
Vapor Deposition ◽  
Schottky Diodes ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Copper Metal ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

ABSTRACTCopper Schottky diodes on n-type GaN grown by metal-organic chemical vapor deposition were achieved and investigated. Ti/Al was used as the ohmic contact. The copper metal is deposited by the Sputter system. The barrier height was determined to be as high as (ΦB =1.13eV by current-voltage (I-V) method and corrected to be ΦB =1.35eV as considered the ideality factor, n, with the value of 1.2. By the capacitance-voltage (C-V) method, the barrier height is determined to be ΦB =1.41eV. Both results indicate that the sputtered copper metal is a high barrier height Schottky metal for n-type GaN.

scholarly journals The effects of electron irradiation and thermal dependence measurements on 4H-Sic Schottky diode

2017 ◽  
Vol 51 (12) ◽  
pp. 1721
Author(s):  
Sabuhi Ganiyev ◽  
M. Azim Khairi ◽  
D. Ahmad Fauzi ◽  
Yusof Abdullah ◽  
N.F. Hasbullah
Keyword(s):  
Barrier Height ◽  
Ideality Factor ◽  
Elevated Temperatures ◽  
Series Resistance ◽  
Schottky Diodes ◽  
High Energy ◽  
Bias Current ◽  
N Saturation ◽  
Saturation Current ◽  
Current Voltage

In this paper the effects of high energy (3.0 MeV) electrons irradiation over a dose ranges from 6 to 15 MGy at elevated temperatures 298 to 448 K on the current-voltage characteristics of 4H-SiC Schottky diodes were investigated. The experiment results show that after irradiation with 3.0 MeV forward bias current of the tested diodes decreased, while reverse bias current increased. The degradation of ideality factor, n, saturation current, Is, and barrier height, Phib, were not noticeable after the irradiation. However, the series resistance, Rs, has increased significantly with increasing radiation dose. In addition, temperature dependence current-voltage measurements, were conducted for temperature in the range of 298 to 448 K. The Schottky barrier height, saturation current, and series resistance, are found to be temperature dependent, while ideality factor remained constant. DOI: 10.21883/FTP.2017.12.45193.8646

Electrical Properties of Inhomogeneous Pt/GaN Schottky Barrier

2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Temperature Dependence ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Ideality Factor ◽  
Schottky Contacts ◽  
Electrical Behavior ◽  
Atomic Force ◽  
Current Voltage ◽  
Local Current

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.

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