Two‐Dimensional Modeling of Low Pressure Chemical Vapor Deposition Hot Wall Tubular Reactors: II . Systematic Analysis of Pure and Phosphorus In Situ Doped Polycrystalline Silicon Depositions

1992 ◽  
Vol 139 (1) ◽  
pp. 305-312 ◽  
Author(s):  
Catherine Azzaro ◽  
Patrick Duverneuil ◽  
Jean‐Pierre Couderc
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Two Dimensional ◽  
Systematic Analysis ◽  
Tubular Reactors ◽  
Dimensional Modeling ◽  
Pressure Chemical

Properties of in Situ Doped Amorphous and Polycrystalline Silicon Deposited by Chemical Vapor Deposition from Tertiarybutylarsine and Tertiarybutylphosph INE

1990 ◽  
Vol 204 ◽  
Author(s):  
David E. Kotccki ◽  
Jeffrey L. Blouse ◽  
Christopher C. Parks ◽  
Robcrt F. Sarkozy
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Rapid Thermal Anneal ◽  
Deposition Kinetics ◽  
Dopant Incorporation ◽  
Pressure Chemical ◽  
C 30

ABSTRACTTcrtiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) were evaluated as n-type dopant precursors for low pressure chemical vapor deposition (LPCVD) of in situ doped amorphous and polycrystalline silicon from silanc. The deposition kinetics, film composition, and electrical properties obtained with TBA and TBP dopant precursors are compared to that obtained when using arsine and phosphine as dopant precursors. Compared to the hydride dopant sources, TBA and TBP provide increased safety due to their sub-atmospheric vapor pressure (≃ 200 Torr at 26°C) and lower toxicity. Using mixtures of TBA and TBP with silane and hydrogen, high quality films of arsenic and phosphorus in situ doped amorphous and polycrystalline silicon were obtained. Dopant incorporation levels ranged from 5×1019 to l.5×1021 cm−3 as measured by SIMS. The deposition rate of polycrystallinc films deposited from TBA and TBP was enhanced by a factor of-≃-3X compared to the hydride dopants for the same mole fraction of dopant precursor. The minimum resistivitics of 5.0 and 1.4 mΩ-cm were obtained, following a 1000°C, 30 second rapid thermal anneal, for ≃500Å thick films on SiO2 deposited with TBA and TBP respectively. A drawback of TBA and TBP is the incorporation of ≃1.0 atomic percent carbon which is > 15X higher than obtained when using the hydride dopant sources. Carbon was observed under all deposition conditions examined.

In situ phosphorus-doped polycrystalline silicon films by low pressure chemical vapor deposition for contact passivation of silicon solar cells

Solar Energy ◽  
2022 ◽  
Vol 231 ◽  
pp. 78-87
Author(s):  
Meriç Fırat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
María Recamán Payo ◽  
Filip Duerinckx ◽  
Loic Tous ◽  
...  
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Pressure Chemical ◽  
Polycrystalline Silicon Films ◽  
Phosphorus Doped

In Situ Phosphorus-Doped Poly-Si by Low Pressure Chemical Vapor Deposition for Passivating Contacts

2020 ◽  
Author(s):  
Meric Firat ◽  
Hariharsudan Sivaramakrishnan Radhakrishnan ◽  
Maria Recaman Payo ◽  
Filip Duerinckx ◽  
Rajiv Sharma ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phosphorus Doped

Silicon Recrystallization in Sipos Material Obtained by Disilane

1995 ◽  
Vol 403 ◽  
Author(s):  
J. J. Pedroviejo ◽  
B. Garrido ◽  
J. C. Ferrer ◽  
A. Cornet ◽  
E. Scheid ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Thermal Annealing ◽  
Rapid Thermal Annealing ◽  
Vapor Deposition ◽  
Polycrystalline Silicon ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Thermal Treatments ◽  
Structural Modifications ◽  
Pressure Chemical

AbstractConventional and Rapid Thermal Annealing of Semi-Insulating Polycrystalline Silicon layers obtained by Low Pressure Chemical Vapor Deposition (LPCVD) from disilane Si2H6 have been performed in order to determine the structural modifications induced on the layers by these thermal treatments. The study of these modifications has been carried out by several analysis methods like FTIR, XPS, TEM, RAMAN and ellipsometry. The results obtained are presented, contrasted and discussed in this work.

Impact of In Situ NH3 pre-treatment of LPCVD SiN passivation on GaN HEMT performance

2022 ◽  
Author(s):  
Ding-Yuan Chen ◽  
Axel R Persson ◽  
Kai Hsin Wen ◽  
Daniel Sommer ◽  
Jan Gruenenpuett ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Untreated Sample ◽  
Pressure Chemical ◽  
Gan Hemts ◽  
Pre Treatment ◽  
The Impact

Abstract The impact on the performance of GaN HEMTs of in situ ammonia (NH3) pre-treatment prior to the deposition of silicon nitride (SiN) passivation with low-pressure chemical vapor deposition is investigated. Three different NH3 pre-treatment durations (0, 3, and 10 minutes) were compared in terms of interface properties and device performance. A reduction of oxygen at the interface between SiN and epi-structure is detected by Scanning Transmission Electron Microscopy-Electron Energy Loss Spectroscopy measurements in the sample subjected to 10 minutes of pre-treatment. The samples subjected to NH3 pre-treatment show a reduced surface-related current dispersion of 9 % (compared to 16% for the untreated sample), which is attributed to the reduction of oxygen at the SiN/epi interface. Furthermore, NH3 pre-treatment for 10 minutes significantly improves the current dispersion uniformity from 14.5 % to 1.9 %. The reduced trapping effects result in a high output power of 3.4 W/mm at 3 GHz (compared to 2.6 W/mm for the untreated sample). These results demonstrate that the in situ NH3 pre-treatment before low-pressure chemical vapor deposition of SiN passivation is critical and can effectively improves the large-signal microwave performance of GaN HEMTs.

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