Full-Band 3-D Monte Carlo Simulation of InAs Nanowires and High Frequency Analysis

2015 ◽  
Vol 62 (6) ◽  
pp. 1848-1854
Author(s):  
Bogdan Popescu ◽  
Dan Popescu ◽  
Marco Saraniti ◽  
Paolo Lugli
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Frequency Analysis ◽  
High Frequency ◽  
Band 3 ◽  
Full Band ◽  
Inas Nanowires

EXTRACTION OF GATE CAPACITANCE OF HIGH-FREQUENCY AND HIGH-POWER GaN HEMTs BY MEANS OF CELLULAR MONTE CARLO SIMULATIONS

2011 ◽  
Vol 20 (03) ◽  
pp. 423-430
Author(s):  
DIEGO GUERRA ◽  
FABIO ALESSIO MARINO ◽  
STEPHEN GOODNICK ◽  
DAVID FERRY ◽  
MARCO SARANITI
Keyword(s):  
Monte Carlo ◽  
High Power ◽  
High Frequency ◽  
Small Signal ◽  
Small Signal Analysis ◽  
Gan Hemt ◽  
Full Band ◽  
Cellular Monte Carlo ◽  
Dc Characterization

A high-frequency a high-power GaN HEMT was analyzed using our full band Cellular Monte Carlo (CMC) simulator, in order to extract small signal parameters and figures of merit, and to correlate them to carrier dynamics and distribution inside the device. A complete RF and DC characterization of the device was performed using experimental data to calibrate the few adjustable parameters of the simulator. Then, gate-related capacitances, such as Cg, Cgd, and Cgs, were directly and indirectly extracted combining small-signal analysis and DC characterization.

scholarly journals Monte Carlo Simulation of III–V Material-Based MOSFET for High Frequency and Ultra-Low Consumption Applications

2010 ◽  
Vol 10 (11) ◽  
pp. 7015-7019 ◽  
Author(s):  
Ming Shi ◽  
Jérôme Saint-Martin ◽  
Arnaud Bournel ◽  
Hassan Maher ◽  
Michel Renvoise ◽  
...  
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
High Frequency ◽  
Low Consumption
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