2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
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179

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A unified predictive TFT model with capability for statistical simulation

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984607 ◽

2002 ◽

Cited By ~ 1

Author(s):

J. Singh ◽

Shengdong Zhang ◽

Hongmei Wang ◽

Mansun Chan

Keyword(s):

Statistical Simulation

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Metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984520 ◽

2002 ◽

Author(s):

Kwang-Ho Kim ◽

Jin-Ping Han ◽

Soon-Won Jung ◽

T.P. Ma

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Ambipolar Schottky barrier SOI MOSFETs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984548 ◽

2002 ◽

Author(s):

Horng-Chih Lin ◽

Chia-Yu Lu ◽

Meng-Fan Wang ◽

Tiao-Yuan Huang

Keyword(s):

Schottky Barrier

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Vertical cavity photonic integrated circuits

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984558 ◽

2002 ◽

Author(s):

K.D. Choquette ◽

A.J. Danner

Keyword(s):

Integrated Circuits ◽

Photonic Integrated Circuits ◽

Vertical Cavity

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Characterization and modeling of silicon-carbide power devices

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984581 ◽

2002 ◽

Author(s):

A. Hefner ◽

D. Berning ◽

T. McNutt ◽

A. Mantooth ◽

J. Lai ◽

...

Keyword(s):

Silicon Carbide ◽

Power Devices

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MEMS-based gray-scale lithography

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984470 ◽

2002 ◽

Cited By ~ 7

Author(s):

C.M. Waits ◽

R. Ghodssi ◽

M.H. Ervin ◽

M. Dubey

Keyword(s):

Gray Scale

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Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984555 ◽

2002 ◽

Author(s):

B. Gunnar Malm ◽

M. Ostling

Keyword(s):

Mixed Mode ◽

High Speed ◽

Harmonic Distortion ◽

Device Simulation

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Optical solder bumps: a modular approach to monolithic optoelectronic integration

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984585 ◽

2002 ◽

Author(s):

C.G. Fonstad

Keyword(s):

Modular Approach ◽

Solder Bumps ◽

Optoelectronic Integration

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Design optimization of multi-barrier tunneling devices using the transfer-matrix method

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984490 ◽

2002 ◽

Author(s):

A. Gehring ◽

T. Grasser ◽

S. Selberherr

Keyword(s):

Design Optimization ◽

Transfer Matrix ◽

Transfer Matrix Method ◽

Matrix Method ◽

Tunneling Devices ◽

Barrier Tunneling

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Investigation of on-state breakdown in InAlAs/InGaAs HEMTs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497) ◽

10.1109/isdrs.2001.984599 ◽

2002 ◽

Author(s):

M. Isler ◽

K. Schunemann

Keyword(s):

State Breakdown

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2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

A unified predictive TFT model with capability for statistical simulation

Metal/SrBi/sub 2/Ta/sub 2/O/sub 9//SiN/Si ferroelectric DRAM (FEDRAM) transistors with ultrathin SiN buffer and long retention

Ambipolar Schottky barrier SOI MOSFETs

Vertical cavity photonic integrated circuits

Characterization and modeling of silicon-carbide power devices

MEMS-based gray-scale lithography

Mixed mode circuit and device simulation of RF harmonic distortion for high-speed SiGe HBTs

Optical solder bumps: a modular approach to monolithic optoelectronic integration

Design optimization of multi-barrier tunneling devices using the transfer-matrix method

Investigation of on-state breakdown in InAlAs/InGaAs HEMTs

2001 International Semiconductor Device Research Symposium. Symposium Proceedings (Cat. No.01EX497)
Latest Publications