Investigation of the local force approximation in numerical device simulation by full-band Monte Carlo simulation

2002 ◽  
Author(s):  
C. Jungemann ◽  
B. Neinhus ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Device Simulation ◽  
Full Band ◽  
Numerical Device

scholarly journals Investigation of the Local Force Approximation in Numerical Device Simulation by Full-band Monte Carlo Simulation

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 281-285 ◽  
Author(s):  
C. Jungemann ◽  
B. Neinhüs ◽  
B. Meinerzhagen
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Energy Transport ◽  
Einstein Relation ◽  
Drift Diffusion Model ◽  
Sige Hbt ◽  
Hydrodynamic Approach ◽  
Full Band ◽  
Nonequilibrium Conditions ◽  
Numerical Device

The critical assumptions in the drift-diffusion model are the local force approximation and the use of the Einstein relation under nonequilibrium conditions. The validity of these two approximations is investigated by full-band Monte Carlo simulation for a SiGe-HBT. It is found that neither the local force approximation nor the Einstein relation holds. Even Einstein relations generalized with the local temperature fail under quasiballistic transport conditions, indicating that the energy transport and hydrodynamic approach are also problematic.

Full-Band Monte Carlo Simulation of Electron Transport in 3C-SiC

2002 ◽  
Vol 389-393 ◽  
pp. 537-540 ◽  
Author(s):  
H.-E. Nilsson ◽  
U. Englund ◽  
M. Hjelm
Keyword(s):  
Monte Carlo Simulation ◽  
Monte Carlo ◽  
Electron Transport ◽  
Full Band
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