Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

Sharmistha Shee; Gargee Bhattacharyya; Subir Kumar Sarkar

doi:10.1109/ted.2014.2332400

Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332400 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2697-2704 ◽

Cited By ~ 13

Author(s):

Sharmistha Shee ◽

Gargee Bhattacharyya ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Dual Material

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Microwave and Optical Technology Letters ◽

10.1002/mop.22319 ◽

2007 ◽

Vol 49 (4) ◽

pp. 979-986

Author(s):

Alok Kushwaha ◽

Manoj K Pandey ◽

A. K Gupta

Keyword(s):

Analytical Modeling ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Dual Material

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A Two-Dimensional (2D) Analytical Modeling and Improved Short Channel Performance of Graded-Channel Gate-Stack (GCGS) Dual-Material Double-Gate (DMDG) MOSFET

Silicon ◽

10.1007/s12633-017-9683-1 ◽

2018 ◽

Vol 10 (6) ◽

pp. 2399-2407 ◽

Cited By ~ 6

Author(s):

Narendar Vadthiya ◽

Shweta Tripathi ◽

R. Bhavani Shankar Naik

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Two Dimensional ◽

Gate Stack ◽

Short Channel ◽

Channel Gate ◽

Channel Performance ◽

Dual Material

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An Analytical Modeling and Simulation of Dual Material Double Gate Tunnel Field Effect Transistor for Low Power Applications

Journal of Electrical Engineering and Technology ◽

10.5370/jeet.2014.9.1.247 ◽

2014 ◽

Vol 9 (1) ◽

pp. 247-253 ◽

Cited By ~ 14

Author(s):

T.S. Arun Samuel ◽

N.B. Balamurugan

Keyword(s):

Low Power ◽

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2520096 ◽

2016 ◽

Vol 63 (3) ◽

pp. 966-973 ◽

Cited By ~ 62

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Kunal Singh ◽

Balraj Singh ◽

Mirgender Kumar ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Dual Material

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A Comparison of Analytical Modeling of Double Gate and Dual material Double GateTFETs with high-KStacked Gate-Oxide Structure forLow power Applications

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544357 ◽

2018 ◽

Author(s):

V. Dharshana ◽

A.Yasmina Fathima ◽

S. Harinie ◽

S.M. Bharathi Priamvatha ◽

V. Ajitha ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Oxide Structure ◽

Dual Material

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Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2791 ◽

2020 ◽

Vol 34 (1) ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Strained Si ◽

Circuit Performance ◽

Subthreshold Current ◽

Interface Charges ◽

Double Gate Mosfet ◽

Dual Material

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Analytical Modeling and Performance Analysis of Graded Channel Strained Dual-Material Double Gate MOSFET

2018 4th International Conference on Computing Communication and Automation (ICCCA) ◽

10.1109/ccaa.2018.8777720 ◽

2018 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Ankush Ghosh ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Analytical Modeling ◽

Double Gate ◽

Double Gate Mosfet ◽

And Performance ◽

Dual Material

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