Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Alok Kushwaha; Manoj K Pandey; A. K Gupta

doi:10.1002/mop.22319

Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Microwave and Optical Technology Letters ◽

10.1002/mop.22319 ◽

2007 ◽

Vol 49 (4) ◽

pp. 979-986

Author(s):

Alok Kushwaha ◽

Manoj K Pandey ◽

A. K Gupta

Keyword(s):

Analytical Modeling ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Dual Material

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2-D analytical modeling of dual material gate fully depleted SOI MOSFET with high-k dielectric

Acta Physica Sinica ◽

10.7498/aps.57.3807 ◽

2008 ◽

Vol 57 (6) ◽

pp. 3807

Author(s):

Luan Su-Zhen ◽

Liu Hong-Xia ◽

Jia Ren-Xu ◽

Cai Nai-Qiong

Keyword(s):

Analytical Modeling ◽

Fully Depleted ◽

Soi Mosfet ◽

High K ◽

High K Dielectric ◽

Dual Material

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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A Compact Two Dimensional Analytical Modeling of Nanoscale Fully Depleted Dual Material Gate Strained SOI/SON MOSFETs for Subdued SCEs

Journal of Low Power Electronics ◽

10.1166/jolpe.2014.1331 ◽

2014 ◽

Vol 10 (3) ◽

pp. 383-391 ◽

Cited By ~ 5

Author(s):

Saheli Sarkhel ◽

Bibhas Manna ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Two Dimensional ◽

Fully Depleted ◽

Dual Material

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Advanced double-gate fully-depleted silicon-on-insulator (DG-FDSOI) device and device impact on circuit design & power management

2004 International Conference on Integrated Circuit Design and Technology (IEEE Cat. No.04EX866) ◽

10.1109/icicdt.2004.1309917 ◽

2004 ◽

Cited By ~ 3

Author(s):

T. Dao

Keyword(s):

Power Management ◽

Circuit Design ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Design Power

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332400 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2697-2704 ◽

Cited By ~ 13

Author(s):

Sharmistha Shee ◽

Gargee Bhattacharyya ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Dual Material

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New Analytical Model for Short-Channel Fully Depleted Dual-Material-Gate Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.074304 ◽

2010 ◽

Vol 49 (7) ◽

pp. 074304 ◽

Cited By ~ 2

Author(s):

Te-Kuang Chiang

Keyword(s):

Metal Oxide ◽

Analytical Model ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Short Channel ◽

Fully Depleted ◽

Dual Material

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Analytical Characterization of a Dual-Material Double-Gate Fully-Depleted SOI MOSFET with Pearson-IV type Doping Distribution

JSTS Journal of Semiconductor Technology and Science ◽

10.5573/jsts.2007.7.2.110 ◽

2007 ◽

Vol 7 (2) ◽

pp. 110-119

Author(s):

Alok Kushwaha ◽

Manoj K. Pandey ◽

Sujata Pandey ◽

Anil K. Gupta

Keyword(s):

Double Gate ◽

Fully Depleted ◽

Soi Mosfet ◽

Analytical Characterization ◽

Dual Material

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A physically based analytical modeling of threshold voltage control for fully-depleted SOI double gate NMOS-PMOS Flexible-FET

2012 IEEE International Conference on Electro/Information Technology ◽

10.1109/eit.2012.6220737 ◽

2012 ◽

Author(s):

Nadim Chowdhury ◽

Zubair Al Azim ◽

Imtiaz Ahmed ◽

Iftikhar Ahmad Niaz ◽

Md. Hasibul Alam ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Voltage Control ◽

Double Gate ◽

Fully Depleted ◽

Physically Based

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