Analytical Modeling and Performance Analysis of Graded Channel Strained Dual-Material Double Gate MOSFET

2018 4th International Conference on Computing Communication and Automation (ICCCA) ◽

10.1109/ccaa.2018.8777720 ◽

2018 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Ankush Ghosh ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Analytical Modeling ◽

Double Gate ◽

Double Gate Mosfet ◽

And Performance ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Compact 2D threshold voltage modeling and performance analysis of ternary metal alloy work-function-engineered double-gate MOSFET

Journal of Computational Electronics ◽

10.1007/s10825-017-1015-6 ◽

2017 ◽

Vol 16 (3) ◽

pp. 648-657 ◽

Cited By ~ 10

Author(s):

Priyanka Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Work Function ◽

Threshold Voltage ◽

Metal Alloy ◽

Double Gate ◽

Double Gate Mosfet ◽

Ternary Metal ◽

And Performance

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Analytical Modeling and Performance Characterization of a Double Gate MOSFET with Dielectric Pockets Incorporating Work Function Engineered Binary Metal Alloy Gate Electrode for Subdued SCEs

IETE Technical Review ◽

10.1080/02564602.2017.1339576 ◽

2017 ◽

Vol 35 (5) ◽

pp. 506-513 ◽

Cited By ~ 2

Author(s):

Ranita Saha ◽

Saheli Sarkhel ◽

Subir Kumar Sarkar

Keyword(s):

Work Function ◽

Analytical Modeling ◽

Metal Alloy ◽

Double Gate ◽

Gate Electrode ◽

Performance Characterization ◽

Binary Metal ◽

Double Gate Mosfet ◽

And Performance

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Analytical modeling and performance analysis for symmetric double gate stack-oxide junctionless field effect transistor in subthreshold region

2017 IEEE Region 10 Humanitarian Technology Conference (R10-HTC) ◽

10.1109/r10-htc.2017.8288963 ◽

2017 ◽

Cited By ~ 2

Author(s):

Raisa Fabiha ◽

Chinmoy Nath Saha ◽

Md. Shafiqul Islam

Keyword(s):

Performance Analysis ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Gate Stack ◽

Subthreshold Region ◽

Effect Transistor ◽

And Performance

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Design and performance analysis of double-gate MOSFET over single-gate MOSFET for RF switch

Microelectronics Journal ◽

10.1016/j.mejo.2010.12.007 ◽

2011 ◽

Vol 42 (3) ◽

pp. 527-534 ◽

Cited By ~ 35

Author(s):

Viranjay M. Srivastava ◽

K.S. Yadav ◽

G. Singh

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Rf Switch ◽

Double Gate Mosfet ◽

And Performance

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Design and performance analysis of cylindrical surrounding double-gate MOSFET for RF switch

Microelectronics Journal ◽

10.1016/j.mejo.2011.07.003 ◽

2011 ◽

Vol 42 (10) ◽

pp. 1124-1135 ◽

Cited By ~ 40

Author(s):

Viranjay M. Srivastava ◽

K.S. Yadav ◽

G. Singh

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Rf Switch ◽

Double Gate Mosfet ◽

And Performance

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Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2791 ◽

2020 ◽

Vol 34 (1) ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Strained Si ◽

Circuit Performance ◽

Subthreshold Current ◽

Interface Charges ◽

Double Gate Mosfet ◽

Dual Material

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Analytical modelling and performance analysis of double-gate MOSFET-based circuit including ballistic/quasi-ballistic effects

Molecular Simulation ◽

10.1080/08927020902769836 ◽

2009 ◽

Vol 35 (8) ◽

pp. 631-637 ◽

Cited By ~ 1

Author(s):

S. Martinie ◽

D. Munteanu ◽

G. Le Carval ◽

J.L. Autran

Keyword(s):

Performance Analysis ◽

Analytical Modelling ◽

Double Gate ◽

Double Gate Mosfet ◽

And Performance

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Design and Performance Analysis of Germanium-Based Junction-less Double Gate MOSFET

2020 International Conference on Emerging Trends in Communication, Control and Computing (ICONC3) ◽

10.1109/iconc345789.2020.9117304 ◽

2020 ◽

Author(s):

Ambika ◽

Gaurav Dhiman

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Double Gate Mosfet ◽

And Performance

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Design and Performance Analysis of Proposed Biosensor based on Double Gate Junctionless Transistor

Silicon ◽

10.1007/s12633-021-01335-6 ◽

2021 ◽

Author(s):

Pawandeep Kaur ◽

Avtar Singh Buttar ◽

Balwinder Raj

Keyword(s):

Performance Analysis ◽

Double Gate ◽

Junctionless Transistor ◽

And Performance

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