2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

Ekta Goel; Sanjay Kumar; Kunal Singh; Balraj Singh; Mirgender Kumar; Satyabrata Jit

doi:10.1109/ted.2016.2520096

2-D Analytical Modeling of Threshold Voltage for Graded-Channel Dual-Material Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2016.2520096 ◽

2016 ◽

Vol 63 (3) ◽

pp. 966-973 ◽

Cited By ~ 62

Author(s):

Ekta Goel ◽

Sanjay Kumar ◽

Kunal Singh ◽

Balraj Singh ◽

Mirgender Kumar ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Dual Material

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

Dual Material

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs

2017 MIXDES - 24th International Conference "Mixed Design of Integrated Circuits and Systems ◽

10.23919/mixdes.2017.8005168 ◽

2017 ◽

Cited By ~ 1

Author(s):

Michael Graef ◽

Franziska Hain ◽

Fabian Hosenfeld ◽

Fabian Horst ◽

Atieh Farokhnejad ◽

...

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Short Channel

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Analytical modeling and numerical simulation of novel double-gate InGaAs vertical nanowire transistor device for threshold voltage tuning and improved performance

Engineering Science and Technology an International Journal ◽

10.1016/j.jestch.2016.08.014 ◽

2016 ◽

Vol 19 (4) ◽

pp. 1857-1863 ◽

Cited By ~ 3

Author(s):

Subha Subramaniam ◽

Sangeeta M. Joshi ◽

R.N. Awale

Keyword(s):

Numerical Simulation ◽

Threshold Voltage ◽

Analytical Modeling ◽

Double Gate ◽

Nanowire Transistor ◽

Improved Performance ◽

Voltage Tuning

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Analytical modeling and simulation of dual material double gate all around tunnel field effect transistor using MATLAB

2017 International Conference on Innovations in Information, Embedded and Communication Systems (ICIIECS) ◽

10.1109/iciiecs.2017.8276039 ◽

2017 ◽

Author(s):

R Helen Ramya Bharathi ◽

P. Karthikeyan

Keyword(s):

Modeling And Simulation ◽

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistor ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor ◽

Dual Material

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Pearson-IV type doping distribution-based analytical modeling of dual-material double-gate fully-depleted silicon-on-insulator MOSFET

Microwave and Optical Technology Letters ◽

10.1002/mop.22319 ◽

2007 ◽

Vol 49 (4) ◽

pp. 979-986

Author(s):

Alok Kushwaha ◽

Manoj K Pandey ◽

A. K Gupta

Keyword(s):

Analytical Modeling ◽

Silicon On Insulator ◽

Double Gate ◽

Fully Depleted ◽

Dual Material

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Quantum Analytical Modeling for Device Parameters and I-V Characteristics of Nanoscale Dual-Material Double-Gate Silicon-on-Nothing MOSFET

IEEE Transactions on Electron Devices ◽

10.1109/ted.2014.2332400 ◽

2014 ◽

Vol 61 (8) ◽

pp. 2697-2704 ◽

Cited By ~ 13

Author(s):

Sharmistha Shee ◽

Gargee Bhattacharyya ◽

Subir Kumar Sarkar

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Dual Material

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A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-019-01377-5 ◽

2019 ◽

Vol 18 (4) ◽

pp. 1173-1181 ◽

Cited By ~ 2

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Dual Material ◽

Threshold Voltage Model ◽

Center Potential

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