Analytical modeling of subthreshold current and swing of
            strained‐Si
            graded channel dual material double gate
            MOSFET
            with interface charges and analysis of circuit performance

Subba Rao Suddapalli; Bheema Rao Nistala

doi:10.1002/jnm.2791

Analytical modeling of subthreshold current and swing of strained‐Si graded channel dual material double gate MOSFET with interface charges and analysis of circuit performance

International Journal of Numerical Modelling Electronic Networks Devices and Fields ◽

10.1002/jnm.2791 ◽

2020 ◽

Vol 34 (1) ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Strained Si ◽

Circuit Performance ◽

Subthreshold Current ◽

Interface Charges ◽

Double Gate Mosfet ◽

Dual Material

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The analog/RF performance of a strained-Si graded-channel dual-material double-gate MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-020-01578-3 ◽

2020 ◽

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Double Gate Mosfet ◽

Rf Performance ◽

Dual Material

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Surface potential based Analytical Modeling of Graded Channel Strained High-k Gate stack Dual-Material Double Gate MOSFET

2019 Devices for Integrated Circuit (DevIC) ◽

10.1109/devic.2019.8783284 ◽

2019 ◽

Cited By ~ 1

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Subir Kumar Sarkar

Keyword(s):

Surface Potential ◽

Analytical Modeling ◽

Double Gate ◽

Gate Stack ◽

High K ◽

Double Gate Mosfet ◽

Dual Material

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A center-potential-based threshold voltage model for a graded-channel dual-material double-gate strained-Si MOSFET with interface charges

Journal of Computational Electronics ◽

10.1007/s10825-019-01377-5 ◽

2019 ◽

Vol 18 (4) ◽

pp. 1173-1181 ◽

Cited By ~ 2

Author(s):

Subba Rao Suddapalli ◽

Bheema Rao Nistala

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Strained Si ◽

Interface Charges ◽

Dual Material ◽

Threshold Voltage Model ◽

Center Potential

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Analytical Modeling of Dielectric Pocket Double-Gate MOSFET Incorporating Hot-Carrier-Induced Interface Charges

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2013.2278077 ◽

2014 ◽

Vol 14 (1) ◽

pp. 390-399 ◽

Cited By ~ 10

Author(s):

Vandana Kumari ◽

Manoj Saxena ◽

R. S. Gupta ◽

Mridula Gupta

Keyword(s):

Analytical Modeling ◽

Double Gate ◽

Hot Carrier ◽

Interface Charges ◽

Double Gate Mosfet

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2-D analytical modeling of subthreshold current and subthreshold swing for ion-implanted strained-Si double-material double-gate (DMDG) MOSFETs

Indian Journal of Physics ◽

10.1007/s12648-017-1019-x ◽

2017 ◽

Vol 91 (9) ◽

pp. 1069-1076 ◽

Cited By ~ 1

Author(s):

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Sanjay Kumar ◽

Satyabrata Jit

Keyword(s):

Analytical Modeling ◽

Subthreshold Swing ◽

Double Gate ◽

Strained Si ◽

Subthreshold Current ◽

Ion Implanted

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Analytical Modeling and Performance Analysis of Graded Channel Strained Dual-Material Double Gate MOSFET

2018 4th International Conference on Computing Communication and Automation (ICCCA) ◽

10.1109/ccaa.2018.8777720 ◽

2018 ◽

Author(s):

Pritha Banerjee ◽

Priyanka Saha ◽

Dinesh Kumar Dash ◽

Ankush Ghosh ◽

Subir Kumar Sarkar

Keyword(s):

Performance Analysis ◽

Analytical Modeling ◽

Double Gate ◽

Double Gate Mosfet ◽

And Performance ◽

Dual Material

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Influence of Localized Interface Charges on Drain Current of Dual-Material Double-Gate Tunnel FETs

2018 3rd International Conference for Convergence in Technology (I2CT) ◽

10.1109/i2ct.2018.8529418 ◽

2018 ◽

Author(s):

Sanjay Kumar ◽

Kamlaksha Baral ◽

Sweta Chander ◽

P. K. Singh ◽

Kunal Singh ◽

...

Keyword(s):

Drain Current ◽

Double Gate ◽

Interface Charges ◽

Tunnel Fets ◽

Dual Material

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2-D Analytical Modeling of the Electrical Characteristics of Dual-Material Double-Gate TFETs With a SiO2/HfO2 Stacked Gate-Oxide Structure

IEEE Transactions on Electron Devices ◽

10.1109/ted.2017.2656630 ◽

2017 ◽

Vol 64 (3) ◽

pp. 960-968 ◽

Cited By ~ 72

Author(s):

Sanjay Kumar ◽

Ekta Goel ◽

Kunal Singh ◽

Balraj Singh ◽

Prince Kumar Singh ◽

...

Keyword(s):

Analytical Modeling ◽

Gate Oxide ◽

Double Gate ◽

Electrical Characteristics ◽

Oxide Structure ◽

Dual Material

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Modeling of Threshold Voltage and Subthreshold Current of Junctionless Channel-Modulated Dual-Material Double-Gate (JL-CM-DMDG) MOSFETs

Silicon ◽

10.1007/s12633-021-01327-6 ◽

2021 ◽

Author(s):

Himanshi Awasthi ◽

Vaibhav Purwar ◽

Abhinav Gupta

Keyword(s):

Threshold Voltage ◽

Double Gate ◽

Subthreshold Current ◽

Dual Material

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Analytical modeling of random discrete traps induced threshold voltage fluctuations in double-gate MOSFET with HfO2/SiO2 gate dielectric stack

Microelectronics Reliability ◽

10.1016/j.microrel.2019.04.019 ◽

2019 ◽

Vol 99 ◽

pp. 87-95

Author(s):

Sriram S.R. ◽

Bindu B.

Keyword(s):

Threshold Voltage ◽

Analytical Modeling ◽

Gate Dielectric ◽

Double Gate ◽

Voltage Fluctuations ◽

Double Gate Mosfet

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