Low-frequency noise behavior of SiO/sub 2/--HfO/sub 2/ dual-layer gate dielectric nMOSFETs with different interfacial oxide thickness

2004 ◽  
Vol 51 (5) ◽  
pp. 780-784 ◽  
Author(s):  
E. Simoen ◽  
A. Mercha ◽  
L. Pantisano ◽  
C. Claeys ◽  
E. Young
Keyword(s):  
Gate Dielectric ◽  
Low Frequency ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Low Frequency Noise

Low frequency noise in amorphous silicon thin film transistors with SiNx gate dielectric

2009 ◽  
Vol 105 (12) ◽  
pp. 124504 ◽  
Author(s):  
S. L. Rumyantsev ◽  
Sung Hun Jin ◽  
M. S. Shur ◽  
Mun-Soo Park
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Silicon Thin Film

Low-Frequency Noise Characterization of Ultra-Low Equivalent-Oxide-Thickness Thulium Silicate Interfacial Layer nMOSFETs

2015 ◽  
Vol 36 (12) ◽  
pp. 1355-1358 ◽  
Author(s):  
Maryam Olyaei ◽  
Eugenio Dentoni Litta ◽  
Per-Erik Hellstrom ◽  
Mikael Ostling ◽  
Bengt Gunnar Malm
Keyword(s):  
Interfacial Layer ◽  
Low Frequency ◽  
Oxide Thickness ◽  
Frequency Noise ◽  
Equivalent Oxide Thickness ◽  
Low Frequency Noise ◽  
Noise Characterization

Low-Frequency Noise After Channel Soft Oxide Breakdown in HfLaSiO Gate Dielectric

2009 ◽  
Vol 30 (5) ◽  
pp. 523-525 ◽  
Author(s):  
Hyun-Sik Choi ◽  
Seung-Ho Hong ◽  
Rock-Hyun Baek ◽  
Kyong-Taek Lee ◽  
Chang-Yong Kang ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Oxide Breakdown

scholarly journals Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015219
Author(s):  
E. Simoen ◽  
B. J. O’Sullivan ◽  
N. Ronchi ◽  
G. Van den Bosch ◽  
D. Linten ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electric Field Effect ◽  
Low Frequency Noise ◽  
Noise Assessment ◽  
Si Doped

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

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