scholarly journals Low-frequency noise assessment of ferro-electric field-effect transistors with Si-doped HfO2 gate dielectric

AIP Advances ◽  
2021 ◽  
Vol 11 (1) ◽  
pp. 015219
Author(s):  
E. Simoen ◽  
B. J. O’Sullivan ◽  
N. Ronchi ◽  
G. Van den Bosch ◽  
D. Linten ◽  
...  
Keyword(s):  
Electric Field ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Electric Field Effect ◽  
Low Frequency Noise ◽  
Noise Assessment ◽  
Si Doped

Low Frequency Noise Analysis of Monolithically Fabricated 4H-SiC CMOS Field Effect Transistors

2014 ◽  
Vol 778-780 ◽  
pp. 428-431 ◽  
Author(s):  
Lucy Claire Martin ◽  
Hua Khee Chan ◽  
David T. Clark ◽  
Ewan P. Ramsay ◽  
A.E. Murphy ◽  
...  
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Low Frequency ◽  
Frequency Noise ◽  
Interface Traps ◽  
Low Frequency Noise ◽  
Noise Characteristics ◽  
The Impact

Low frequency noise in 4H-SiC lateral p-channel metal oxide semiconductor field effect transistors (PMOSFETs) in the frequency range from 1 Hz to 100 kHz has been used to investigate the relationship between gate dielectric fabrication techniques and the resulting density of interface traps at the semiconductor-dielectric interface in order to examine the impact on device performance. The results show that the low frequency noise characteristics in p-channel 4H-SiC MOSFETs in weak inversion are in agreement with the McWhorter model and are dominated by the interaction of channel carriers with interface traps at the gate dielectric/semiconductor interface.

Low-frequency noise characteristics of HfSiON gate-dielectric metal-oxide-semiconductor-field-effect transistors

2005 ◽  
Vol 86 (8) ◽  
pp. 082102 ◽  
Author(s):  
Bigang Min ◽  
Siva Prasad Devireddy ◽  
Zeynep Çelik-Butler ◽  
Ajit Shanware ◽  
Keith Green ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Noise Characteristics

Low-frequency noise in top-gated ambipolar carbon nanotube field effect transistors

2008 ◽  
Vol 92 (22) ◽  
pp. 223114 ◽  
Author(s):  
Guangyu Xu ◽  
Fei Liu ◽  
Song Han ◽  
Koungmin Ryu ◽  
Alexander Badmaev ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Low frequency noise in 4H-SiC metal oxide semiconductor field effect transistors

2008 ◽  
Vol 104 (9) ◽  
pp. 094505 ◽  
Author(s):  
S. L. Rumyantsev ◽  
M. S. Shur ◽  
M. E. Levinshtein ◽  
P. A. Ivanov ◽  
J. W. Palmour ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Frequency Noise ◽  
Low Frequency Noise

Transitions between channel and contact regimes of low-frequency noise in many-layer MoS2 field effect transistors

2019 ◽  
Vol 114 (11) ◽  
pp. 113502 ◽  
Author(s):  
Jiseok Kwon ◽  
Joon Hyeong Park ◽  
Collin J. Delker ◽  
Charles T. Harris ◽  
Brian Swartzentruber ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise

Characterization of Low-Frequency Noise in Etched GaAs Nanowire Field-Effect Transistors Having SiNxGate Insulator

2012 ◽  
Vol 51 (6S) ◽  
pp. 06FE18 ◽  
Author(s):  
Toru Muramatsu ◽  
Kensuke Miura ◽  
Yuta Shiratori ◽  
Zenji Yatabe ◽  
Seiya Kasai
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Gaas Nanowire
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