Gate oxide multiple soft breakdown (Multi-SBD) impact on CMOS inverter

2004 ◽  
Author(s):  
Huey-Ming Huang ◽  
C.Y. Ko ◽  
M.L. Yang ◽  
P.J. Liao ◽  
J.J. Wang ◽  
...  
Keyword(s):  
Gate Oxide ◽  
Cmos Inverter ◽  
Soft Breakdown

Modeling Soft Breakdown of Ultra-Thin Gate Oxide Layers

1999 ◽  
Vol 567 ◽  
Author(s):  
Michel Houssa ◽  
P.W. Mertens ◽  
M.M. Heyns
Keyword(s):  
Gate Voltage ◽  
Dielectric Breakdown ◽  
Percolation Cluster ◽  
Gate Oxide ◽  
Oxide Layers ◽  
Long Range Correlations ◽  
Electrical Stress ◽  
Non Gaussian ◽  
Thin Gate Oxide ◽  
Soft Breakdown

ABSTRACTThe time-dependent dielectric breakdown of MOS capacitors with ultra-thin gate oxide layers is investigated. After the occurrence of soft breakdown, the gate current increases by 3 to 4 orders of magnitudes and behaves like a power law of the applied gate voltage. It is shown that this behavior can be explained by assuming that a percolation path is formed between the electron traps generated in the gate oxide layer during electrical stress of the capacitors. The time dependence of the gate voltage signal after soft breakdown is next analysed. It is shown that the fluctuations in the gate voltage are non-gaussian as well as that long-range correlations exist in the system after soft breakdown. These results can be explained by a dynamic percolation model, taking into account the trapping-detrapping of charges within the percolation cluster formed at soft breakdown.

Post-soft-breakdown characteristics of deep submicron NMOSFETs with ultrathin gate oxide

2001 ◽  
Vol 22 (7) ◽  
pp. 348-350 ◽  
Author(s):  
Min-Yu Tsai ◽  
Horng-Chih Lin ◽  
Da-Yuan Lee ◽  
Tiao-Yuan Huang
Keyword(s):  
Gate Oxide ◽  
Deep Submicron ◽  
Soft Breakdown

scholarly journals Conduction mechanism of ultra-thin gate oxide n-MOSFET after soft breakdown

2005 ◽  
Vol 54 (8) ◽  
pp. 3884
Author(s):  
Wang Yan-Gang ◽  
Xu Ming-Zhen ◽  
Tan Chang-Hua ◽  
Duan Xiao-Rong
Keyword(s):  
Conduction Mechanism ◽  
Gate Oxide ◽  
Thin Gate Oxide ◽  
Soft Breakdown

Post-Soft-Breakdown Characteristics of Deep Sub-Micron NMOSFETs with Ultra-Thin Gate Oxide

2001 ◽  
Author(s):  
Da-Yuan Lee ◽  
Horng-Chih Lin ◽  
Min-Yu Tsai ◽  
Tiao-Yuan Huang ◽  
T. Wang
Keyword(s):  
Gate Oxide ◽  
Thin Gate Oxide ◽  
Soft Breakdown

Soft breakdown of ultra-thin gate oxide layers

1996 ◽  
Vol 43 (9) ◽  
pp. 1499-1504 ◽  
Author(s):  
M. Depas ◽  
T. Nigam ◽  
M.M. Heyns
Keyword(s):  
Gate Oxide ◽  
Oxide Layers ◽  
Thin Gate Oxide ◽  
Soft Breakdown
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