2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)
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Burn-in discussion group minutes

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911917 ◽

2005 ◽

Cited By ~ 1

Author(s):

R. Multari ◽

R.-P. Vollertsen ◽

V. Reece

Keyword(s):

Discussion Group

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Thin oxide discussion group summary moderators

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911915 ◽

2005 ◽

Author(s):

D.J. DiMaria ◽

J.S. Suehle

Keyword(s):

Discussion Group ◽

Thin Oxide

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Electromigration discussion group summary moderators

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911916 ◽

2005 ◽

Author(s):

H.A. Schafft ◽

T.D. Sullivan

Keyword(s):

Discussion Group

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Non-volatile memory special interest group discussion notes

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911940 ◽

2005 ◽

Author(s):

R. Paulsen

Keyword(s):

Interest Group ◽

Special Interest ◽

Group Discussion ◽

Special Interest Group ◽

Non Volatile Memory ◽

Volatile Memory

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Off-state-degradation of 170 nm and 140 nm buried LDD pMOSFETs with different HALO implants

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911928 ◽

2002 ◽

Author(s):

S. Holzhauser ◽

A. Narr

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New SWEAT method for fast, accurate and stable electromigration testing on wafer level

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911906 ◽

2002 ◽

Cited By ~ 5

Author(s):

J. von Hagen ◽

G. Antonin ◽

J. Fazekas ◽

L. Head ◽

H. Schafft

Keyword(s):

Wafer Level

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The effect of stress interruption and pulsed biased stress on ultra-thin gate dielectric reliability

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911904 ◽

2002 ◽

Cited By ~ 2

Author(s):

Bin Wang ◽

J.S. Suehle ◽

E.M. Vogel ◽

J.B. Bernstein

Keyword(s):

Gate Dielectric

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Characterization of extrusion formation during high temperature anneal

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911929 ◽

2002 ◽

Cited By ~ 1

Author(s):

J. Kelsey-Wynne ◽

F. Chen ◽

J. Furukawa ◽

T. Sullivan

Keyword(s):

High Temperature ◽

High Temperature Anneal

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Fast-bit-limited lifetime modeling of advanced floating gate non-volatile memories

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911894 ◽

2002 ◽

Cited By ~ 8

Author(s):

A. Scarpa ◽

G. Tao ◽

J. Dijkstra ◽

F.G. Kuper

Keyword(s):

Floating Gate

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Improving the accuracy of "Shift and Ratio" channel length extraction method in deep submicron technology

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515) ◽

10.1109/irws.2000.911910 ◽

2002 ◽

Author(s):

Qiuyi Ye ◽

Yujun Li ◽

W. Tonti ◽

W. Berry ◽

C. Parks ◽

...

Keyword(s):

Extraction Method ◽

Channel Length ◽

Deep Submicron

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2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)Latest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Burn-in discussion group minutes

Thin oxide discussion group summary moderators

Electromigration discussion group summary moderators

Non-volatile memory special interest group discussion notes

Off-state-degradation of 170 nm and 140 nm buried LDD pMOSFETs with different HALO implants

New SWEAT method for fast, accurate and stable electromigration testing on wafer level

The effect of stress interruption and pulsed biased stress on ultra-thin gate dielectric reliability

Characterization of extrusion formation during high temperature anneal

Fast-bit-limited lifetime modeling of advanced floating gate non-volatile memories

Improving the accuracy of "Shift and Ratio" channel length extraction method in deep submicron technology

2000 IEEE International Integrated Reliability Workshop Final Report (Cat. No.00TH8515)
Latest Publications