Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761623 ◽

2003 ◽

Cited By ~ 3

Author(s):

W. Lee ◽

S. Lee ◽

T. Ahn ◽

H. Hwang

Keyword(s):

Carrier Lifetime ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Trench Isolation ◽

Narrow Width

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Hot carrier degradation for narrow width MOSFET with shallow trench isolation

Microelectronics Reliability ◽

10.1016/s0026-2714(99)00222-x ◽

2000 ◽

Vol 40 (1) ◽

pp. 49-56 ◽

Cited By ~ 6

Author(s):

Woosung Lee ◽

Hyunsang Hwang

Keyword(s):

Shallow Trench Isolation ◽

Hot Carrier ◽

Trench Isolation ◽

Narrow Width ◽

Hot Carrier Degradation

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A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect

IEEE Electron Device Letters ◽

10.1109/55.887470 ◽

2000 ◽

Vol 21 (12) ◽

pp. 575-577 ◽

Cited By ~ 19

Author(s):

Jongoh Kim ◽

Taewoo Kim ◽

Jaebeom Park ◽

Woojin Kim ◽

Byungseop Hong ◽

...

Keyword(s):

Nitric Oxide ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dp08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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Anomalous Narrow Width Effect in NMOS and PMOS Surface Channel Transistors Using Shallow Trench Isolation

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635391 ◽

2006 ◽

Author(s):

K. S. See W. S. Lau

Keyword(s):

Shallow Trench Isolation ◽

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Investigation of Hot Carrier Degradation in Shallow-Trench-Isolation-Based High-Voltage Laterally Diffused Metal–Oxide–Semiconductor Field-Effect Transistors by a Novel Direct Current Current–Voltage Technique

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dp08 ◽

2012 ◽

Vol 51 ◽

pp. 04DP08 ◽

Cited By ~ 1

Author(s):

Yandong He ◽

Ganggang Zhang

Keyword(s):

High Voltage ◽

Direct Current ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Current Voltage ◽

Trench Isolation

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The influence of shallow trench isolation angle on hot carrier effect of STI-based LDMOS transistors

2017 IEEE Regional Symposium on Micro and Nanoelectronics (RSM) ◽

10.1109/rsm.2017.8069149 ◽

2017 ◽

Cited By ~ 2

Author(s):

A. F. M. Alimin ◽

H. H. Hizamul-din ◽

S. F. W. M. Hatta ◽

N. Soin

Keyword(s):

Shallow Trench Isolation ◽

Hot Carrier ◽

Carrier Effect ◽

Trench Isolation ◽

Hot Carrier Effect

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The Role of Shallow Trench Isolation on Channel Width Noise Scaling for Narrow Width CMOS and Flash Cells

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530810 ◽

2008 ◽

Cited By ~ 6

Author(s):

Yin-Lung Ryan Lu ◽

Yu-Ching Liao ◽

William McMahon ◽

Yung-Huei Lee ◽

Helen Kung ◽

...

Keyword(s):

Channel Width ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width

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Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

ECS Transactions ◽

10.1149/1.2767289 ◽

2019 ◽

Vol 8 (1) ◽

pp. 71-75 ◽

Cited By ~ 1

Author(s):

Jae Yong Seo ◽

Jeong-Eun Seok ◽

Hyun-Jung Kim ◽

Sang-keun Lee ◽

Jae-Eun Jeon ◽

...

Keyword(s):

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width

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Investigation and Demonstration of Hot Carrier Effect in LDMOS Transistors with Ultra-Shallow Trench Isolation

2020 China Semiconductor Technology International Conference (CSTIC) ◽

10.1109/cstic49141.2020.9282390 ◽

2020 ◽

Author(s):

Zhaozhao Xu ◽

Jun Hu ◽

Ziquan Fang ◽

Wenting Duan ◽

Donghua Liu ◽

...

Keyword(s):

Shallow Trench Isolation ◽

Hot Carrier ◽

Carrier Effect ◽

Trench Isolation ◽

Hot Carrier Effect

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The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

Chinese Physics Letters ◽

10.1088/0256-307x/30/8/080701 ◽

2013 ◽

Vol 30 (8) ◽

pp. 080701 ◽

Cited By ~ 2

Author(s):

Hui-Xiang Huang ◽

Da-Wei Bi ◽

Chao Peng ◽

Yan-Wei Zhang ◽

Zheng-Xuan Zhang

Keyword(s):

Ionizing Radiation ◽

Radiation Damage ◽

Silicon On Insulator ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width ◽

Silicon On Insulator Technology

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