Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

2019 ◽  
Vol 8 (1) ◽  
pp. 71-75 ◽  
Author(s):  
Jae Yong Seo ◽  
Jeong-Eun Seok ◽  
Hyun-Jung Kim ◽  
Sang-keun Lee ◽  
Jae-Eun Jeon ◽  
...  
Keyword(s):  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Narrow Width

A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect

2000 ◽  
Vol 21 (12) ◽  
pp. 575-577 ◽  
Author(s):  
Jongoh Kim ◽  
Taewoo Kim ◽  
Jaebeom Park ◽  
Woojin Kim ◽  
Byungseop Hong ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Width Effect ◽  
Narrow Width

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

Advances in Chemical-Mechanical Planarization

MRS Bulletin ◽  
2002 ◽  
Vol 27 (10) ◽  
pp. 743-751 ◽  
Author(s):  
Rajiv K. Singh ◽  
Rajeev Bajaj
Keyword(s):  
Surface Topography ◽  
Process Integration ◽  
Semiconductor Industry ◽  
Chemical Mechanical Planarization ◽  
Shallow Trench Isolation ◽  
Trench Isolation ◽  
Fundamental Understanding ◽  
Copper Polishing ◽  
Future Growth

AbstractThe primary aim of this issue of MRS Bulletin is to present an overview of the materials issues in chemical–mechanical planarization (CMP), also known as chemical–mechanial polishing, a process that is used in the semiconductor industry to isolate and connect individual transistors on a chip. The CMP process has been the fastest-growing semiconductor operation in the last decade, and its future growth is being fueled by the introduction of copper-based interconnects in advanced microprocessors and other devices. Articles in this issue range from providing a fundamental understanding of the CMP process to the latest advancements in the field. Topics covered in these articles include an overview of CMP, fundamental principles of slurry design, understanding wafer–pad–slurry interactions, process integration issues, the formulation of abrasive-free slurries for copper polishing, understanding surface topography issues in shallow trench isolation, and emerging applications.

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