A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect

Jongoh Kim;  Taewoo Kim;  Jaebeom Park;  Woojin Kim;  Byungseop Hong;  Gyuhan Yoon

doi:10.1109/55.887470

A shallow trench isolation using nitric oxide (NO)-annealed wall oxide to suppress inverse narrow width effect

IEEE Electron Device Letters ◽

10.1109/55.887470 ◽

2000 ◽

Vol 21 (12) ◽

pp. 575-577 ◽

Cited By ~ 19

Author(s):

Jongoh Kim ◽

Taewoo Kim ◽

Jaebeom Park ◽

Woojin Kim ◽

Byungseop Hong ◽

...

Keyword(s):

Nitric Oxide ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Anomalous Narrow Width Effect in NMOS and PMOS Surface Channel Transistors Using Shallow Trench Isolation

2005 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2005.1635391 ◽

2006 ◽

Author(s):

K. S. See W. S. Lau

Keyword(s):

Shallow Trench Isolation ◽

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Anomalous narrow width effect in p-channel metal–oxide–semiconductor surface channel transistors using shallow trench isolation technology

Microelectronics Reliability ◽

10.1016/j.microrel.2008.02.005 ◽

2008 ◽

Vol 48 (6) ◽

pp. 919-922 ◽

Cited By ~ 5

Author(s):

W.S. Lau ◽

K.S. See ◽

C.W. Eng ◽

W.K. Aw ◽

K.H. Jo ◽

...

Keyword(s):

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Semiconductor Surface ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Correction to "Trench Isolation Step-Induced (TRISI) Narrow Width Effect on MOSFET"

IEEE Electron Device Letters ◽

10.1109/led.2002.806972 ◽

2002 ◽

Vol 23 (11) ◽

pp. 676-676 ◽

Cited By ~ 1

Author(s):

Youngmin Kim ◽

S. Sridhar ◽

A. Chatterjee

Keyword(s):

Trench Isolation ◽

Width Effect ◽

Narrow Width

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Degradation of hot carrier lifetime for narrow width MOSFET with shallow trench isolation

1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) ◽

10.1109/relphy.1999.761623 ◽

2003 ◽

Cited By ~ 3

Author(s):

W. Lee ◽

S. Lee ◽

T. Ahn ◽

H. Hwang

Keyword(s):

Carrier Lifetime ◽

Shallow Trench Isolation ◽

Hot Carrier ◽

Trench Isolation ◽

Narrow Width

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The Role of Shallow Trench Isolation on Channel Width Noise Scaling for Narrow Width CMOS and Flash Cells

2008 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA) ◽

10.1109/vtsa.2008.4530810 ◽

2008 ◽

Cited By ~ 6

Author(s):

Yin-Lung Ryan Lu ◽

Yu-Ching Liao ◽

William McMahon ◽

Yung-Huei Lee ◽

Helen Kung ◽

...

Keyword(s):

Channel Width ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width

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Investigation of Hump Degradation by F-N stress for Narrow Width n-MOSFETs with Shallow Trench Isolation (STI)

ECS Transactions ◽

10.1149/1.2767289 ◽

2019 ◽

Vol 8 (1) ◽

pp. 71-75 ◽

Cited By ~ 1

Author(s):

Jae Yong Seo ◽

Jeong-Eun Seok ◽

Hyun-Jung Kim ◽

Sang-keun Lee ◽

Jae-Eun Jeon ◽

...

Keyword(s):

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width

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Trench isolation step-induced (TRISI) narrow width effect on MOSFET

IEEE Electron Device Letters ◽

10.1109/led.2002.802589 ◽

2002 ◽

Vol 23 (10) ◽

pp. 600-602 ◽

Cited By ~ 5

Author(s):

Youngmin Kim ◽

S. Sridhar ◽

A. Chatterjee

Keyword(s):

Trench Isolation ◽

Width Effect ◽

Narrow Width

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The Enhanced Role of Shallow-Trench Isolation in Ionizing Radiation Damage of Narrow Width Devices in 0.2 μm Partially-Depleted Silicon-on-Insulator Technology

Chinese Physics Letters ◽

10.1088/0256-307x/30/8/080701 ◽

2013 ◽

Vol 30 (8) ◽

pp. 080701 ◽

Cited By ~ 2

Author(s):

Hui-Xiang Huang ◽

Da-Wei Bi ◽

Chao Peng ◽

Yan-Wei Zhang ◽

Zheng-Xuan Zhang

Keyword(s):

Ionizing Radiation ◽

Radiation Damage ◽

Silicon On Insulator ◽

Shallow Trench Isolation ◽

Trench Isolation ◽

Narrow Width ◽

Silicon On Insulator Technology

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Hot carrier degradation for narrow width MOSFET with shallow trench isolation

Microelectronics Reliability ◽

10.1016/s0026-2714(99)00222-x ◽

2000 ◽

Vol 40 (1) ◽

pp. 49-56 ◽

Cited By ~ 6

Author(s):

Woosung Lee ◽

Hyunsang Hwang

Keyword(s):

Shallow Trench Isolation ◽

Hot Carrier ◽

Trench Isolation ◽

Narrow Width ◽

Hot Carrier Degradation

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Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

10.31399/asm.cp.istfa1998p0011 ◽

1998 ◽

Author(s):

I. De Wolf ◽

G. Groeseneken ◽

H.E. Maes ◽

M. Bolt ◽

K. Barla ◽

...

Keyword(s):

Raman Spectroscopy ◽

Mechanical Stress ◽

Defect Formation ◽

Active Area ◽

Wet Oxidation ◽

Leakage Currents ◽

Shallow Trench Isolation ◽

Micro Raman Spectroscopy ◽

Silicon Devices ◽

Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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