Electromigration failure modes in aluminum metallization for semiconductor devices

1969 ◽  
Vol 57 (9) ◽  
pp. 1587-1594 ◽  
Author(s):  
J.R. Black
Keyword(s):  
Failure Modes ◽  
Semiconductor Devices ◽  
Aluminum Metallization

Thin-Film Failure Modes in Semiconductor Devices

1970 ◽  
Vol 7 (1) ◽  
pp. 154-154
Author(s):  
D. W. Jones ◽  
J. L. Mills
Keyword(s):  
Thin Film ◽  
Failure Modes ◽  
Semiconductor Devices ◽  
Film Failure

EFFECT OF PASSIVATING COATINGS ON METALLIZATION TOPOLOGY IN PRODUCTION OF SEMICONDUCTOR DEVICES

2021 ◽  
Vol 0 (4) ◽  
pp. 30-34
Author(s):  
M.V. POTAPOVA ◽  
◽  
M.YU. MAKHMUD-AKHUNOV ◽  
V.N. GOLOVANOV ◽  
K.E. IMESHEV ◽  
...  
Keyword(s):  
Gas Phase ◽  
Silicon Oxide ◽  
Semiconductor Device ◽  
Semiconductor Devices ◽  
Experimental Studies ◽  
Chemical Deposition ◽  
Aluminum Film ◽  
Single Crystal Substrate ◽  
Plasma Chemical ◽  
Aluminum Metallization

The surface quality of the metallized contact pads on the crystal plays an important role in the production of semiconductor devices. This paper presents experimental studies of the effect of a protective passivation film of silicon oxide on the surface structure of aluminum metallization in the field of forming contact pads. Plasma chemical deposition of passivation layer SiO2 from gas phase (PECVD method) was carried out on prepared samples of silicon with aluminum metallization using a high-frequency power source with a frequency of 13.56 MHz. After that, chemical etching of precipitated silicon oxide was carried out to simulate the process of forming contact areas of semiconductor device crystals. The resistance of the metallization surface to plasma processes was studied by raster electron microscopy. It is shown that as a result of the process cycle, defects of the dislocation type are generated in the applied film Al. The nature of the observed defects has been found to be different. The revealed large square-shaped pits with a size of ~ 1 μm at the places where dislocations come to the surface are of a single nature and appear independently of the processes of applying passivation coatings, which is determined by the orienting action of a single-crystal substrate having some low dislocation density. While the second type of defects, shown by the presence of etching pits measuring ~ 100-300 nm, is characterized by a higher surface density. Moreover, the exclusion of the passivation process with silicon oxide did not lead to the appearance of this type of defects, which determined their nature associated with the ion bombardment of the Al layer during the plasma chemical deposition of silicon oxide from the gas phase. It is also shown that a feature of this type of defects is their disorientation both with respect to the first type of defects and with respect to each other. Detection of the structure of the metallization layers was carried out by X-ray diffraction, the results of which show the polycrystallinity of the formed aluminum metallization. The preferred orientation of the aluminum film corresponds to the substrate Si (111).

scholarly journals Two Decades of Condition Monitoring Methods for Power Devices

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 683
Author(s):  
Giovanni Susinni ◽  
Santi Agatino Rizzo ◽  
Francesco Iannuzzo
Keyword(s):  
Customer Service ◽  
Condition Monitoring ◽  
Smart Grids ◽  
Failure Modes ◽  
Semiconductor Devices ◽  
Maintenance Cost ◽  
Monitoring Methods ◽  
Power Devices ◽  
Power Semiconductor ◽  
Multiple Sensors

Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research.

Selective Wet-Etch of Silicon Nitride Passivation Layers

1998 ◽  
Author(s):  
P. Malberti ◽  
M. Ciappa
Keyword(s):  
Silicon Nitride ◽  
Failure Analysis ◽  
Wide Spectrum ◽  
Semiconductor Devices ◽  
Layer By Layer ◽  
Passivation Layers ◽  
Aluminum Metallization ◽  
Voltage Contrast ◽  
Wet Etch ◽  
First Time

Abstract Selective removal of silicon nitride passivation layers is of major importance in failure analysis of semiconductor devices. Typical applications are: cleaning of the die surface for optical microsccjpy and for removal of superficial contamination, electron microscopy, liquid crystals, voltage contrast, electron beam testing, mechanical microprobing, and . selective layer-by-layer strip. A new wet-etch for silicon nitride passivation layers has been developed, which is fully selective! over aluminum metallization and which preserves full device functionality after passivation removal. For the first time in the failure analysis literature, the chemical recipe and the etching procedure are given in details. This etchant has been experimented for more than two years in many failure analysis laboratories on a wide spectrum of discrete and integrated semiconductor devices, always with excellent results. Its capability and efficiency are illustrated by two failure analysis case histories.

Aluminum Metallization Technology for Semiconductor Devices

JOM ◽  
1985 ◽  
Vol 37 (5) ◽  
pp. 55-59 ◽  
Author(s):  
T. J. Garosshen ◽  
T. A. Stephenson ◽  
T. P. Slavin
Keyword(s):  
Semiconductor Devices ◽  
Aluminum Metallization
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