scholarly journals Two Decades of Condition Monitoring Methods for Power Devices

Electronics ◽  
2021 ◽  
Vol 10 (6) ◽  
pp. 683
Author(s):  
Giovanni Susinni ◽  
Santi Agatino Rizzo ◽  
Francesco Iannuzzo
Keyword(s):  
Customer Service ◽  
Condition Monitoring ◽  
Smart Grids ◽  
Failure Modes ◽  
Semiconductor Devices ◽  
Maintenance Cost ◽  
Monitoring Methods ◽  
Power Devices ◽  
Power Semiconductor ◽  
Multiple Sensors

Condition monitoring (CM) of power semiconductor devices enhances converter reliability and customer service. Many studies have investigated the semiconductor devices failure modes, the sensor technologies, and the signal processing techniques to optimize the CM. Furthermore, the improvement of power devices’ CM thanks to the use of the Internet of Things and artificial intelligence technologies is rising in smart grids, transportation electrification, and so on. These technologies will be widespread in the future, where more and more smart techniques and smart sensors will enable a better estimation of the state of the health (SOH) of the devices. Considering the increasing use of power converters, CM is essential as the analysis of the data obtained from multiple sensors enables the prediction of the SOH, which, in turn, enables to properly schedule the maintenance, i.e., accounting for the trade-off between the maintenance cost and the cost and issues due to the device failure. From this perspective, this review paper summarizes past developments and recent advances of the various methods with the aim of describing the current state-of-the-art in CM research.

Invasive Methods to Diagnose Stator Winding and Bearing Defects of an Induction Motors

2019 ◽  
pp. 122-130
Author(s):  
Muhammad Aman Sheikh ◽  
Nordin B. Saad ◽  
Nursyarizal Mohd Nor ◽  
Sheikh Tahir Bakhsh ◽  
Muhammad Irfan
Keyword(s):  
Induction Motor ◽  
Condition Monitoring ◽  
Failure Modes ◽  
Short Circuit ◽  
Raw Material ◽  
Maintenance Cost ◽  
Stator Winding ◽  
Stator Windings ◽  
Bearing Defects ◽  
Bearing Failures

Condition monitoring in an induction motor must concentrate on the root causes of the failure modes that exhibit a slow failure sequence. According to published surveys, two-fifths of the faults are due to bearing failures. Inter-turn short circuit faults in stator windings are approximately responsible for one-third of the motor faults. In the last few decades, various methods and alternative techniques have been proposed and implemented to diagnose induction motor faults. In an induction motor, stator winding and bearing faults account the largest percentage of motor failure. Due to the fact these faults can lead the motor to catastrophic failure that are expensive in term of maintenance cost, wastage raw material, and unplanned shutdown. Thus, to diagnose the state of motor and overcome existing problem, the chapter provides detailed invasive methods which are proposed and are currently in practice. Moreover, the chapter also highlights the limitation, scope, and the challenges of existing invasive condition monitoring techniques.

High-Accuracy Fatigue Evaluation of Power Devices by Multi-Coupled Analysis

2009 ◽  
Author(s):  
Kazunori Shinohara ◽  
Qiang Yu ◽  
Takashi Anzawa ◽  
Hideaki Ishii
Keyword(s):  
Semiconductor Device ◽  
Semiconductor Devices ◽  
High Accuracy ◽  
Hybrid Vehicles ◽  
Coupled Analysis ◽  
Power Devices ◽  
Power Semiconductor Device ◽  
Power Semiconductor ◽  
Power Semiconductor Devices ◽  
Fatigue Evaluation

To calculate power semiconductor device fatigue with high accuracy, multiphysics analysis comprising electrical, heat, and stress analyses is presented. Power semiconductor devices (e.g., IGBTs) have been widely used in various applications. In particularly, the power semiconductor device (IGBT) becomes important component in vehicle applications. There is a high demand for compact and high-power capacity next-generation vehicles such as electric vehicles and hybrid vehicles. However, it causes the problem such as thermal stress. The reliability of power semiconductor devices has to be investigated by carrying out highly accurate simulations before developing IGBTs. In this paper, the electrical conductivity in silicon (IGBT) is considered as the material parameter. The semiconductor resistance is calculated by voltage distributions in the semiconductor. Comparing the conductivity constant case with the conductivity variation case, we examine the effects of the electrical characteristics of the semiconductor on fatigue.

Residual Voids in Degassing Process of Encapsulation Gel for Power Semiconductor Devices

2014 ◽  
Vol 134 (6) ◽  
pp. 432-433
Author(s):  
Masahiro Sato ◽  
Akiko Kumada ◽  
Kunihiko Hidaka ◽  
Keisuke Yamashiro ◽  
Yuji Hayase ◽  
...  
Keyword(s):  
Semiconductor Devices ◽  
Power Semiconductor ◽  
Power Semiconductor Devices
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