Thin-Film Failure Modes in Semiconductor Devices

1970 ◽  
Vol 7 (1) ◽  
pp. 154-154
Author(s):  
D. W. Jones ◽  
J. L. Mills
Keyword(s):  
Thin Film ◽  
Failure Modes ◽  
Semiconductor Devices ◽  
Film Failure

Corrosion of Electronic and Magnetic Devices and Materials

1996 ◽  
Vol 451 ◽  
Author(s):  
Gerald S. Frankel
Keyword(s):  
Thin Film ◽  
Failure Modes ◽  
Galvanic Corrosion ◽  
Potential Drop ◽  
Magnetic Devices ◽  
Disk Structure ◽  
Magnetic Layers ◽  
Ohmic Potential Drop ◽  
Corrosion Problem ◽  
Corrosion Susceptibility

ABSTRACTCorrosion of thin film structures commonly used in electronic and magnetic devices is discussed. Typical failure modes are presented, and galvanic corrosion is discussed in some detail since it is one common problem with such devices. A graphical explanation for the determination of the ohmic potential drop during galvanic corrosion is presented. The corrosion problem of thin film disks is shown to have changed during the past ten years owing to changes in disk structure. The corrosion susceptibility of two antiferromagnetic alloys used for exchange coupling to soft magnetic layers is discussed.

scholarly journals Performance and failure modes of Si anodes patterned with thin-film Ni catalyst islands for water oxidation

2018 ◽  
Vol 2 (5) ◽  
pp. 983-998 ◽  
Author(s):  
Ke Sun ◽  
Nicole L. Ritzert ◽  
Jimmy John ◽  
Haiyan Tan ◽  
William G. Hale ◽  
...  
Keyword(s):  
Thin Film ◽  
Water Oxidation ◽  
Failure Modes ◽  
Continuous Operation ◽  
Ni Catalyst ◽  
Si Anodes

Silicon photoanodes patterned with thin-film Ni catalyst islands exhibited stable sunlight-driven O2evolution for over 240 h of continuous operation in 1.0 M KOH.

Modeling observed capacitance–voltage hysteresis in metal–SiO2-thin film organic semiconductor devices

2006 ◽  
Vol 50 (6) ◽  
pp. 1097-1104 ◽  
Author(s):  
Darrell Niemann ◽  
Norman Gunther ◽  
Charles Kwong ◽  
Mark Barycza ◽  
Mahmud Rahman
Keyword(s):  
Thin Film ◽  
Organic Semiconductor ◽  
Semiconductor Devices ◽  
Sio2 Thin Film ◽  
Capacitance Voltage ◽  
Organic Semiconductor Devices ◽  
Voltage Hysteresis

Degradation of the Strength of a Grain and a Grain Boundary due to the Accumulation of the Structural Defects of Crystal

2018 ◽  
Author(s):  
Guoxiong Zheng ◽  
Yifan Luo ◽  
Hideo Miura
Keyword(s):  
Thin Film ◽  
Grain Boundary ◽  
Tensile Test ◽  
Grain Boundaries ◽  
Intergranular Fracture ◽  
Semiconductor Devices ◽  
Ebsd Analysis ◽  
Structural Defects ◽  
Polycrystalline Materials ◽  
Transgranular Fracture

Various brittle fractures have been found to occur at grain boundaries in polycrystalline materials. In thin film interconnections used for semiconductor devices, open failures caused by electro- and strain-induced migrations have been found to be dominated by porous random grain boundaries that consist of a lot of defects. Therefore, it is very important to explicate the dominant factors of the strength of a grain boundary in polycrystalline materials for assuring the safe and reliable operation of various products. In this study, both electron back-scatter diffraction (EBSD) analysis and a micro tensile test in a scanning electron microscope was applied to copper thin film which is used for interconnection of semiconductor devices in order to clarify the relationship between the strength and the crystallinity of a grain and a grain boundary quantitatively. Image quality (IQ) value obtained from the EBSD analysis, which indicates the average sharpness of the diffraction pattern (Kikuchi pattern) was applied to the crystallinity analysis. This IQ value indicates the total density of defects such as vacancies, dislocations, impurities, and local strain, in other words, the order of atom arrangement in the observed area in nano-scale. In the micro tensile test system, stress-strain curves of a single crystal specimen and a bicrystal specimen was measured quantitatively. Both transgranular and intergranular fracture modes were observed in the tested specimens with different IQ values. Based to the results of these experiments, it was found that there is the critical IQ value at which the fracture mode of the bicrystal specimen changes from brittle intergranular fracture at a grain boundary to ductile transgranular fracture in a grain. The strength of a grain boundary increases monotonically with IQ value because of the increase in the total number of rigid atomic bonding. On the other hand, the strength of a grain decreases monotonically with the increase of IQ value because the increase in the order of atom arrangement accelerates the movement of dislocations. Finally, it was clarified that the strength of a grain boundary and a grain changes drastically as a strong function of their crystallinity.

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