55-mW 300-MHz analog-digital converters using digital VLSI technology

Author(s):  
P. Sutardja ◽  
D.D. Tang ◽  
J. Altieri ◽  
L.E. Thon ◽  
G. Coleman ◽  
...  
Keyword(s):  
2006 ◽  
pp. 461-489
Author(s):  
Kritsapon Leelavattananon ◽  
Chris Toumazou
Keyword(s):  

2020 ◽  
Vol 8 ◽  
pp. 14-21
Author(s):  
Surya Man Koju ◽  
Nikil Thapa

This paper presents economic and reconfigurable RF based wireless communication at 2.4 GHz between two vehicles. It implements digital VLSI using two Spartan 3E FPGAs, where one vehicle receives the information of another vehicle and shares its own information to another vehicle. The information includes vehicle’s speed, location, heading and its operation, such as braking status and turning status. It implements autonomous vehicle technology. In this work, FPGA is used as central signal processing unit which is interfaced with two microcontrollers (ATmega328P). Microcontroller-1 is interfaced with compass module, GPS module, DF Player mini and nRF24L01 module. This microcontroller determines the relative position and the relative heading as seen from one vehicle to another. Microcontroller-2 is used to measure the speed of vehicle digitally. The resulting data from these microcontrollers are transmitted separately and serially through UART interface to FPGA. At FPGA, different signal processing such as speed comparison, turn comparison, distance range measurement and vehicle operation processing, are carried out to generate the voice announcement command, warning signals, event signals, and such outputs are utilized to warn drivers about potential accidents and prevent crashes before event happens.


2021 ◽  
Vol 120 ◽  
pp. 114100
Author(s):  
Nunzio Mirabella ◽  
Maurizio Ricci ◽  
Ignazio Calà ◽  
Roberto Lanza ◽  
Michelangelo Grosso
Keyword(s):  

1987 ◽  
Vol 65 (5) ◽  
pp. 1072-1078 ◽  
Author(s):  
Paul G. Glavina ◽  
D. Jed Harrison

The fabrication of ion sensitive field effect transistors (ISFET) and microelectrode arrays for use as chemical sensors using a commercial CMOS fabrication process is described. The commercial technology is readily available through the Canadian Microelectronics Corporation; however, several of the recommended design rules must be ignored in preparing chemical sensors using this process. The ISFET devices show near theoretical response to K+ in aqueous solution (55 mV slope) when coated with a K+ sensitive membrane. An extended gate ion sensitive device is presented which offers advantages in encapsulation of ISFET sensors. The source-drain current of both devices show a linear response to log [Formula: see text] in contrast to ISFETs previously reported that have high internal lead resistances. Al and poly-Si microelectrode arrays are fabricated commercially and then Pt is electrodeposited on the microelectrodes. The resulting arrays show good cyclic voltammetric response to Fe(CN)64− and Ru(NH3)63+ and are relatively durable.


2001 ◽  
Vol 89 (3) ◽  
pp. 240-258 ◽  
Author(s):  
J.D. Plummer ◽  
P.B. Griffin
Keyword(s):  

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