Bulk CMOS VLSI Technology Studies. Part 4. Design of a CMOS Microsequencer.

1985 ◽  
Author(s):  
J. D. Trotter ◽  
G. S. Prasad
Keyword(s):  
Technology Studies ◽  
Vlsi Technology ◽  
Cmos Vlsi

Concluding and Beyond

2016 ◽  
Author(s):  
Patricia S. Churchland ◽  
Terrence J. Sejnowski
Keyword(s):  
Motor Control ◽  
Computer Modeling ◽  
Long Range ◽  
Computational Neuroscience ◽  
Vlsi Technology ◽  
The World ◽  
Artificial Neural ◽  
Cmos Vlsi ◽  
Silicon Based ◽  
The Brain

This concluding chapter explores future avenues for research and what remains to be done if the computer-modeling projects aimed at understanding the mysteries of the brain are to progress. In particular, it considers the problem of constructing synthetic brains and the reasons why the long-range project of understanding how the brain works should engender such constructive ambitions. It also discusses three ways of addressing the constructive problem: Carver Mead's strategy of building artificial neural structures, such as retinas and cochleas, using silicon-based CMOS VLSI technology; Dana Ballard's method of integrating perception with motor control; and Rodney Brook's method which involves making mobots capable of getting around in the world using limited reflex repertoires. The chapter concludes with an assessment of theoretical and ethical questions about what to do with the knowledge gained from computational neuroscience.

Self-aligned ion implant masking for CMOS VLSI technology

1982 ◽  
Vol 3 (4) ◽  
pp. 99-100 ◽  
Author(s):  
J.M. Pimbley ◽  
M. Ghezzo
Keyword(s):  
Vlsi Technology ◽  
Cmos Vlsi

A Novel Silicided Shallow Junction Technology for Cmos VLSI

1986 ◽  
Vol 71 ◽  
Author(s):  
D.L. Kwong ◽  
Y.H. Ku ◽  
S.K. Lee ◽  
N.S. Alvi ◽  
P. Chu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Ion Beam ◽  
Electrical Characteristics ◽  
Ion Beam Mixing ◽  
Si Substrates ◽  
Novel Technique ◽  
Low Temperature Annealing ◽  
Vlsi Technology ◽  
Shallow Junctions ◽  
Cmos Vlsi

AbstractA novel technique for the fabrication of shallow, silicided p+-n junctions with excellent electrical characteristics has been developed. The technique utilizes the ion implantation of dopants into silicide layers formed by ion-beam mixing with Si ions and low temperature annealing, and the subsequent drive-in of implanted dopants into the Si substrates to form shallow junctions. This technique can be easily applied to the fabrication of MOSFETs in a self-aligned fashion, and can have a significant impact on CMOS VLSI technology.

CMOS VLSI Technology

Vlsi Handbook ◽  
1985 ◽  
pp. 121-139 ◽  
Author(s):  
DAVID B. SCOTT ◽  
KUEING-LONG CHEN ◽  
RODERICK D. DAVIES
Keyword(s):  
Vlsi Technology ◽  
Cmos Vlsi
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