Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure

T. Ghosh; D. Basak

doi:10.1109/led.2011.2169231

Nonvolatile Memory Effect in a Au/Cu–ZnO/p-Si Type of Metal–Insulator–Semiconductor Structure

IEEE Electron Device Letters ◽

10.1109/led.2011.2169231 ◽

2011 ◽

Vol 32 (12) ◽

pp. 1746-1748 ◽

Cited By ~ 7

Author(s):

T. Ghosh ◽

D. Basak

Keyword(s):

Memory Effect ◽

Nonvolatile Memory ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Controllable capacitance–voltage hysteresis width in the aluminum–cerium-dioxide–silicon metal–insulator–semiconductor structure: Application to nonvolatile memory devices without ferroelectrics

Applied Physics Letters ◽

10.1063/1.126199 ◽

2000 ◽

Vol 76 (14) ◽

pp. 1881-1883 ◽

Cited By ~ 29

Author(s):

L. Kim ◽

J. Kim ◽

D. Jung ◽

Y. Roh

Keyword(s):

Nonvolatile Memory ◽

Cerium Dioxide ◽

Semiconductor Structure ◽

Memory Devices ◽

Metal Insulator ◽

Hysteresis Width ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

Nonvolatile Memory Devices ◽

Voltage Hysteresis

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The formation of Ge nanocrystals in a metal–insulator–semiconductor structure and its memory effect

Journal of Crystal Growth ◽

10.1016/j.jcrysgro.2003.10.068 ◽

2004 ◽

Vol 262 (1-4) ◽

pp. 95-104 ◽

Cited By ~ 17

Author(s):

C.L. Heng ◽

Y.J. Liu ◽

A.T.S. Wee ◽

T.G. Finstad

Keyword(s):

Memory Effect ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Ge Nanocrystals

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Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal–insulator– semiconductor structure

Applied Physics Letters ◽

10.1063/1.1459760 ◽

2002 ◽

Vol 80 (11) ◽

pp. 2014-2016 ◽

Cited By ~ 127

Author(s):

W. K. Choi ◽

W. K. Chim ◽

C. L. Heng ◽

L. W. Teo ◽

Vincent Ho ◽

...

Keyword(s):

Amorphous Silicon ◽

Memory Effect ◽

Silicon Oxide ◽

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Germanium Nanocrystals ◽

Amorphous Silicon Oxide ◽

Oxide Matrix

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Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

Thin Solid Films ◽

10.1016/0040-6090(89)90001-1 ◽

1989 ◽

Vol 168 (2) ◽

pp. 157-163 ◽

Cited By ~ 3

Author(s):

B. Ullrich ◽

F. Kuchar ◽

R. Meisels ◽

F. Olcaytug ◽

A. Jachimowicz

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Capacitance Voltage ◽

P Type

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Investigations of metal-insulator-semiconductor structure in-homogeneities using a small-size mercury probe

Microelectronics Reliability ◽

10.1016/0026-2714(85)90335-x ◽

1985 ◽

Vol 25 (3) ◽

pp. 593

Keyword(s):

Semiconductor Structure ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Characteristics of an indium antimonide metal-insulator-semiconductor structure prepared by remote plasma enhanced chemical vapor deposition

Journal of Applied Physics ◽

10.1063/1.365697 ◽

1997 ◽

Vol 82 (8) ◽

pp. 3917-3921 ◽

Cited By ~ 5

Author(s):

Jae-Gon Lee ◽

Sie-Young Choi ◽

Sang-Jun Park

Keyword(s):

Chemical Vapor Deposition ◽

Indium Antimonide ◽

Vapor Deposition ◽

Chemical Vapor ◽

Semiconductor Structure ◽

Remote Plasma ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

Journal of Applied Physics ◽

10.1063/1.343099 ◽

1989 ◽

Vol 65 (2) ◽

pp. 651-661 ◽

Cited By ~ 2

Author(s):

S. Mitsutsuka ◽

T. Okamoto ◽

T. Niitsuma ◽

S. Minagawa

Keyword(s):

Acoustic Waves ◽

Surface Acoustic Waves ◽

Semiconductor Structure ◽

Propagation Loss ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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InP-SiO2 metal-insulator-semiconductor structure parameters investigated with DLTS and other capacitance techniques

Solid State Communications ◽

10.1016/0038-1098(87)90748-4 ◽

1987 ◽

Vol 64 (4) ◽

pp. 411-416 ◽

Cited By ~ 5

Author(s):

P. Bogdanski ◽

F. Murray ◽

J.P. Piel

Keyword(s):

Semiconductor Structure ◽

Structure Parameters ◽

Metal Insulator ◽

Metal Insulator Semiconductor

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Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

Journal of Applied Physics ◽

10.1063/1.369381 ◽

1999 ◽

Vol 85 (10) ◽

pp. 7471-7476 ◽

Cited By ~ 13

Author(s):

Kinya Ashikaga ◽

Toshio Ito

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Semiconductor Structure ◽

Memory Retention ◽

Simple Metal ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Retention Characteristics

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Role of interfacial oxide layer thickness and annealing temperature on structural and electronic properties of Al/Ta2O5/TiO2/Si metal–insulator–semiconductor structure

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2017.05.119 ◽

2017 ◽

Vol 718 ◽

pp. 104-111 ◽

Cited By ~ 6

Author(s):

M. Chandra Sekhar ◽

Nallabala Nanda Kumar Reddy ◽

Harish Sharma Akkera ◽

B. Purusottam Reddy ◽

V. Rajendar ◽

...

Keyword(s):

Electronic Properties ◽

Oxide Layer ◽

Layer Thickness ◽

Annealing Temperature ◽

Semiconductor Structure ◽

Oxide Layer Thickness ◽

Metal Insulator ◽

Metal Insulator Semiconductor ◽

Structural And Electronic Properties

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