Propagation loss of surface acoustic waves on a monolithic metal‐insulator‐semiconductor structure

1989 ◽  
Vol 65 (2) ◽  
pp. 651-661 ◽  
Author(s):  
S. Mitsutsuka ◽  
T. Okamoto ◽  
T. Niitsuma ◽  
S. Minagawa
Keyword(s):  
Acoustic Waves ◽  
Surface Acoustic Waves ◽  
Semiconductor Structure ◽  
Propagation Loss ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

HIGH-PERFORMANCE SURFACE TRANSVERSE WAVE RESONATORS IN THE LOWER GHz FREQUENCY RANGE

2000 ◽  
Vol 10 (03) ◽  
pp. 735-792 ◽  
Author(s):  
IVAN D. AVRAMOV
Keyword(s):  
Phase Noise ◽  
Transverse Wave ◽  
High Power ◽  
Acoustic Waves ◽  
Power Efficiency ◽  
Surface Acoustic Waves ◽  
Low Noise ◽  
Propagation Loss ◽  
Range Data ◽  
Frequency Range

Since the first successful surface transverse wave (STW) resonator was demonstrated by Bagwell and Bray in 1987, STW resonant devices on temperature stable cut orientations of piezoelectric quartz have enjoyed a spectacular development. The tremendous interest in these devices is based on the fact that, compared to the widely used surface acoustic waves (SAW), the STW acoustic mode features some unique properties which makes it very attractive for low-noise microwave oscillator applications in the 1.0 to 3.0 GHz frequency range in which SAW based or dielectric resonator oscillators (DRO) fail to provide satisfactory performance. These STW properties include: high propagation velocity, material Q-values exceeding three times those of SAW and bulk acoustic waves (BAW) on quartz, low propagation loss, unprecedented 1/f device phase noise, extremely high power handling ability, as well as low aging and low vibration sensitivity. This paper reviews the fundamentals of STW propagation in resonant geometries on rotated Y-cuts of quartz and highlights important design aspects necessary for achieving desired STW resonator performance. Different designs of high- and low-Q, low-loss resonant devices and coupled resonator filters (CRF) in the 1.0 to 2.5 GHz range are characterized and discussed. Design details and data on state-of-the-art STW based fixed frequency and voltage controlled oscillators (VCO) with low phase noise and high power efficiency are presented. Finally, several applications of STW devices in GHz range data transmitters, receivers and sensors are described and discussed.

scholarly journals Using Field-Effect Gas Sensors for Monitoring H2 in Transformer Oil

2020 ◽  
Vol 327 ◽  
pp. 01005
Author(s):  
Artur Litvinov ◽  
Nikolay Samotaev ◽  
Maya Etrekova ◽  
Anastasia Ivanova ◽  
Dmitriy Filipchuk ◽  
...  
Keyword(s):  
Gas Sensor ◽  
Field Effect ◽  
Semiconductor Structure ◽  
Transformer Oil ◽  
Ceramic Surface ◽  
Voltage Transformer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Highly Sensitive ◽  
High Voltage Transformer

Hydrogen can be released during the thermal decomposition of organic materials, therefore, monitoring its level in the working industrial high-voltage transformer oil allows you to identify the development of degenerative processes in advance, because these processes can lead to an accident in the future. In experiments has shown that highly sensitive and small-sized field effect gas sensor based on the metal-insulator-semiconductor structure can be used for measuring of Hydrogen in oil with direct contact of its structure with transformer oil. Given the harsh environmental conditions of hydrogen measurement the field effect capacity type gas sensor were fabricated by using laser micromilling technique for fabrication compact ceramic surface mounting device package and microheater for sustentation working temperature of metal-insulator-semiconductor structure.

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