Analysis of memory retention characteristics of ferroelectric field effect transistors using a simple metal–ferroelectric–metal–insulator–semiconductor structure

1999 ◽  
Vol 85 (10) ◽  
pp. 7471-7476 ◽  
Author(s):  
Kinya Ashikaga ◽  
Toshio Ito
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Semiconductor Structure ◽  
Memory Retention ◽  
Simple Metal ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Retention Characteristics

High-performance ZnO∕ZnMgO field-effect transistors using a hetero-metal-insulator-semiconductor structure

2006 ◽  
Vol 89 (5) ◽  
pp. 053502 ◽  
Author(s):  
Shigehiko Sasa ◽  
Masashi Ozaki ◽  
Kazuto Koike ◽  
Mitsuaki Yano ◽  
Masataka Inoue
Keyword(s):  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Front-gate InGaAs-on-Insulator metal-insulator-semiconductor field-effect transistors

2010 ◽  
Vol 97 (25) ◽  
pp. 253502 ◽  
Author(s):  
Yuji Urabe ◽  
Masafumi Yokoyama ◽  
Hideki Takagi ◽  
Tetsuji Yasuda ◽  
Noriyuki Miyata ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

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