Self-consistent full-band modeling of quantum semiconductor nanostructures

2002 ◽  
Author(s):  
F. Chirico ◽  
A. Di Carlo ◽  
P. Lugli
Keyword(s):  
Semiconductor Nanostructures ◽  
Full Band ◽  
Self Consistent ◽  
Quantum Semiconductor

scholarly journals Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 91-95 ◽  
Author(s):  
Francesco Chirico ◽  
Aldo Di Carlo ◽  
Paolo Lugli
Keyword(s):  
Semiconductor Nanostructures ◽  
Bloch Functions ◽  
Mos Structure ◽  
Poisson Equations ◽  
Full Band ◽  
Self Consistent ◽  
Efficient Integration ◽  
Quantum Semiconductor

We have developed a full-band pseudopotential-based approach to describe semiconductor nanostructures. The method relies on the bulk Bloch functions expansion of the system wavefunction, which guarantee an efficient integration of the full-band approach in self-consistent schemes where Schroedinger and Poisson equations are solved iteratively. In order to gain efficiency of the method a suitable separation between structure dependent and material dependent contributions to the system hamiltonian is presented. Results are shown for a typical Si/SiO2 MOS structure.

Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

1999 ◽  
Vol 595 ◽  
Author(s):  
Maziar Farahmand ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Electron Velocity ◽  
Wurtzite Phase ◽  
Velocity Overshoot ◽  
Density Of Electronic States ◽  
Full Band ◽  
Self Consistent ◽  
Output Characteristics

AbstractThe output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

Self-Consistent Tight-Binding Methods Applied to Semiconductor Nanostructures

1997 ◽  
Vol 491 ◽  
Author(s):  
Aldo Di Carlo
Keyword(s):  
Function Approximation ◽  
Tight Binding ◽  
High Electron Mobility Transistors ◽  
Optical Devices ◽  
Semiconductor Nanostructures ◽  
High Electron ◽  
High Electron Mobility ◽  
Semiconductor Nanostructure ◽  
Electron Mobility Transistors ◽  
Self Consistent

ABSTRACTA self-consistent tight-binding approach applied to semiconductor nanostructure is presented. This allows us to describe electronic and optical properties of nanostructured devices beyond the usual envelope function approximation. Example of applications are given for High Electron Mobility Transistors (HEMTs) and non-linear optical devices.

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