Self-consistent full band two-dimensional Monte Carlo two-dimensional Poisson device solver for modeling SiGe p-channel devices

2006 ◽  
Vol 24 (4) ◽  
pp. 1997 ◽  
Author(s):  
S. Krishnan ◽  
M. Fischetti ◽  
D. Vasileska
Keyword(s):  
Monte Carlo ◽  
Two Dimensional ◽  
Full Band ◽  
Self Consistent

Full Band Monte Carlo Study for Two-Dimensional Hole Transport in Strained Si p-MOSFETs

2003 ◽  
Vol 2 (2-4) ◽  
pp. 109-112 ◽  
Author(s):  
Hiroshi Nakatsuji ◽  
Yoshinari Kamakura ◽  
Kenji Taniguchi
Keyword(s):  
Monte Carlo ◽  
Monte Carlo Study ◽  
Hole Transport ◽  
Two Dimensional ◽  
Strained Si ◽  
Full Band

Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

1999 ◽  
Vol 595 ◽  
Author(s):  
Maziar Farahmand ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Electron Velocity ◽  
Wurtzite Phase ◽  
Velocity Overshoot ◽  
Density Of Electronic States ◽  
Full Band ◽  
Self Consistent ◽  
Output Characteristics

AbstractThe output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

scholarly journals Full Band Monte Carlo Comparison of Wurtzite and Zincblende Phase GaN MESFETs

2000 ◽  
Vol 5 (S1) ◽  
pp. 633-639
Author(s):  
Maziar Farahmand ◽  
Kevin F. Brennan
Keyword(s):  
Monte Carlo ◽  
Breakdown Voltage ◽  
Cutoff Frequency ◽  
Electron Velocity ◽  
Wurtzite Phase ◽  
Velocity Overshoot ◽  
Density Of Electronic States ◽  
Full Band ◽  
Self Consistent ◽  
Output Characteristics

The output characteristics, cutoff frequency, breakdown voltage and the transconductance of wurtzite and zincblende phase GaN MESFETs have been calculated using a self-consistent, full band Monte Carlo simulation. It is found that the calculated breakdown voltage for the wurtzite device is considerably higher than that calculated for a comparable GaN zincblende phase device. The zincblende device is calculated to have a higher transconductance and cutoff frequency than the wurtzite device. The higher breakdown voltage of the wurtzite phase device is attributed to the higher density of electronic states for this phase compared to the zincblende phase. The higher cutoff frequency and transconductance of the zincblende phase GaN device is attributed to more appreciable electron velocity overshoot for this phase compared to that for the wurtzite phase. The maximum cutoff frequency and transconductance of a 0.1 μm gate-length zincblende GaN MESFET are calculated to be 220GHz and 210 mS/mm, respectively. The corresponding quantities for the wurtzite GaN device are calculated to be 160GHz and 158 mS/mm.

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