Nonlinear structures: soliton, shocklike and explosive waves in quantum semiconductor plasma

The properties and conditions for the appearance of some nonlinear waves in a three-dimensional semiconductor plasma are discussed, by studying the described plasma fluid system with quantum gradient forces and degraded pressures. Our analytical procedure is built on the reductive perturbation theory to obtain the Kadomtsev-Petvashvili equation for the fluid model and solving it using the direct integration method and the Bäcklund transform. Through different solution methods we got different nonlinear solutions describing different pulse profiles such as soliton, kink and explosive pulses. This model can be used to identify the potential disturbances in a semiconductor plasma.

Multicomponent Model of Charge Transport in Quantum Semiconductor Devices

A model that allows taking into account the influence of quantum and non-equilibrium effects to the characteristics of semiconductor devices is presented. The model was successfully used for calculation the characteristics of resonant-tun-neling diodes, electronic, thermionic and optoelectronic devices based on nanowires. In a quasi-classical approximation it goes into a drift-diffusion model.

Simply synthesized nitrogen-doped graphene quantum dot (NGQD)-modified electrode for the ultrasensitive photoelectrochemical detection of dopamine

Recently, nitrogen-doped graphene quantum dots (NGQDs), as a new type of quantum semiconductor and photoelectrochemical material, are promising candidates in photoelectric sensing, water splitting, and biological imaging and have various potential application prospects. In this work, NGQDs were prepared by a simple calcination method, and then a photoelectrochemical sensing platform based on the NGQDs electrode with superior photoelectrochemical activity was designed and fabricated for the detection of dopamine (DA). Benefitting from the quantum effect and size effect, NGQDs displayed an enhanced photocurrent effective within ultra-low detection limit (0.03 μm), wide detection range (0.03–450 and 450–9680 μm), and high sensitivity in detecting DA with the assistance of ultraviolet light irradiation. The NGQDs electrode also showed continuous and stable photocurrent densities after long-term experiment, indicating the excellent durability of NGQDs for DA detection.

Impact of Relativistic Electron Beam on Hole Acoustic Instability in Quantum Semiconductor Plasmas

We studied the influence of the classical relativistic beam of electrons on the hole acoustic wave (HAW) instability exciting in the semiconductor quantum plasmas. We conducted this study by using the quantum-hydrodynamic model of dense plasmas, incorporating the quantum effects of semiconductor plasma species which include degeneracy pressure, exchange-correlation potential and Bohm potential. Analysis of the quantum characteristics of semiconductor plasma species along with relativistic effect of beam electrons on the dispersion relation of the HAW is given in detail qualitatively and quantitatively by plotting them numerically. It is worth mentioning that the relativistic electron beam (REB) stabilises the HAWs exciting in semiconductor (GaAs) degenerate plasma.