scholarly journals Self-consistent Full-band Modeling of Quantum Semiconductor Nanostructures

VLSI Design ◽  
2001 ◽  
Vol 13 (1-4) ◽  
pp. 91-95 ◽  
Author(s):  
Francesco Chirico ◽  
Aldo Di Carlo ◽  
Paolo Lugli
Keyword(s):  
Semiconductor Nanostructures ◽  
Bloch Functions ◽  
Mos Structure ◽  
Poisson Equations ◽  
Full Band ◽  
Self Consistent ◽  
Efficient Integration ◽  
Quantum Semiconductor

We have developed a full-band pseudopotential-based approach to describe semiconductor nanostructures. The method relies on the bulk Bloch functions expansion of the system wavefunction, which guarantee an efficient integration of the full-band approach in self-consistent schemes where Schroedinger and Poisson equations are solved iteratively. In order to gain efficiency of the method a suitable separation between structure dependent and material dependent contributions to the system hamiltonian is presented. Results are shown for a typical Si/SiO2 MOS structure.

Analysis of MOS Device Capacitance-Voltage Characteristics Based on the Self-Consistent Solution of the Schrödinger and Poisson Equations

1999 ◽  
Vol 592 ◽  
Author(s):  
C. Raynaud ◽  
J.L. Autran ◽  
P. Masson ◽  
M. Bidaud ◽  
A. Poncet
Keyword(s):  
Quantum Effect ◽  
Mesh Size ◽  
Oxide Semiconductor ◽  
Uniform Mesh ◽  
Poisson Equations ◽  
Capacitance Voltage ◽  
Self Consistent ◽  
Consistent Solution ◽  
The One ◽  
Mos Device

ABSTRACTThe one-dimensional Schridinger and Poisson equations have been numerically solved in metal-oxide-semiconductor devices using a three-point finite difference scheme with a non-uniform mesh size. The capacitance-voltage characteristic of the structure has been calculated via this self-consistent approach and results have been compared with data obtained from the resolution of Poisson equation using different approximated methods based on the Boltzmann statistic with and without a first order quantum effect correction or the exact Fermi-Dirac statistic. The present work permits to evaluate and quantify the errors made by these approximations in determining the thickness of ultra-thin oxides.

Asymptotics toward a nonlinear wave for an outflow problem of a model of viscous ions motion

2017 ◽  
Vol 27 (11) ◽  
pp. 2111-2145 ◽  
Author(s):  
Yeping Li ◽  
Peicheng Zhu
Keyword(s):  
Nonlinear Wave ◽  
The Self ◽  
Navier Stokes ◽  
Asymptotically Stable ◽  
Spatial Decay ◽  
Main Ingredient ◽  
One Dimensional ◽  
Poisson Equations ◽  
Self Consistent ◽  
The One

We shall investigate the asymptotic stability, toward a nonlinear wave, of the solution to an outflow problem for the one-dimensional compressible Navier–Stokes–Poisson equations. First, we construct this nonlinear wave which, under suitable assumptions, is the superposition of a stationary solution and a rarefaction wave. Then it is shown that the nonlinear wave is asymptotically stable in the case that the initial data are a suitably small perturbation of the nonlinear wave. The main ingredient of the proof is the [Formula: see text]-energy method that takes into account both the effect of the self-consistent electrostatic potential and the spatial decay of the stationary part of the nonlinear wave.

A self‐consistent solution of Schrödinger–Poisson equations using a nonuniform mesh

1990 ◽  
Vol 68 (8) ◽  
pp. 4071-4076 ◽  
Author(s):  
I‐H. Tan ◽  
G. L. Snider ◽  
L. D. Chang ◽  
E. L. Hu
Keyword(s):  
Nonuniform Mesh ◽  
Poisson Equations ◽  
Self Consistent ◽  
Consistent Solution

Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 363-366 ◽  
Author(s):  
Y. Wang ◽  
L. Chen ◽  
M.K. Mikhov ◽  
G. Samson ◽  
B.J. Skromme
Keyword(s):  
Spectroscopic Data ◽  
Radiative Recombination ◽  
Stacking Faults ◽  
Induced Current ◽  
Forward Voltage ◽  
Poisson Equations ◽  
Forward Current ◽  
Self Consistent ◽  
Electron Beam Induced Current

Formation of I1 Shockley stacking faults by recombination-enhanced defect glide in 4HSiC p-i-n diodes subject to high forward current stress is studied in diodes on both c-oriented and aoriented substrates. The forward voltage increases during stressing for both orientations, accompanied by nucleation and expansion of faults visible in electroluminescence (EL) imaging. Low temperature photoluminescence (PL) measurements on degraded diodes of both orientations reveal the same set of exciton peaks, confirming that the electronic structure of the faults is the same in both cases. The spectroscopic data are compared to self-consistent solutions of the Schrödinger and Poisson equations including polarization charge. Dislocations nucleating the faults are bright in EL images but dark in electron beam-induced current (EBIC) imaging, confirming that they are sites of enhanced radiative recombination.

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