Quantum well lasers for optoelectronic integration grown by laser assisted atomic layer epitaxy

2005 ◽  
Author(s):  
Q. Chen ◽  
J.S. Osinski ◽  
P.D. Dapkus
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy ◽  
Optoelectronic Integration

InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

1987 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
R. M. Kolbas ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

1990 ◽  
Vol 57 (14) ◽  
pp. 1437-1439 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
P. D. Dapkus
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy

1994 ◽  
Vol 65 (14) ◽  
pp. 1748-1750 ◽  
Author(s):  
N. C. Frateschi ◽  
M. Y. Jow ◽  
P. D. Dapkus ◽  
A. F. J. Levi
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

1987 ◽  
Vol 51 (19) ◽  
pp. 1530-1532 ◽  
Author(s):  
S. P. DenBaars ◽  
C. A. Beyler ◽  
A. Hariz ◽  
P. D. Dapkus
Keyword(s):  
Quantum Well ◽  
Active Regions ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

Atomic layer epitaxy for quantum well nitride-based devices

2016 ◽  
Author(s):  
Jennifer Hite ◽  
Neeraj Nepal ◽  
Virginia R. Anderson ◽  
Jaime A. Freitas ◽  
Michael A. Mastro ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration

1991 ◽  
Vol 222 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
C. A. Beyler ◽  
M. Cao ◽  
P. D. Dapkus ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Growth Parameters ◽  
Growth Parameter ◽  
Chemical Vapor ◽  
Atomic Layer ◽  
Gain Medium ◽  
Atomic Layer Epitaxy ◽  
Small Areas ◽  
Wide Range ◽  
Optoelectronic Integration

ABSTRACTTwo implementations of laser assisted atomic layer epitaxy(LALE) for selective area growth of GaAs using trimethylgallium and AsH3 as precursors are described. A wide range of growth parameters lead to self-limiting monolayer/cycle growth which is suited for precise layer thickness control. By combining LALE with conventional metalorganic chemical vapor deposition, A10.3Ga0.7As/GaAs double heterostructures including LALE GaAs have been grown, permitting electrical and optical characterization to be performed on the thin and small areas of the LALE deposits. The information is used in a growth parameter optimization process resulting in device quality GaAs. Quantum well lasers with active region grown by LALE are demonstrated for the first time. The application of LALE to optoelectronic integration is demonstrated by depositing small area quantum wells as the gain medium in an otherwise transparent waveguide.

InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy

1990 ◽  
Vol 56 (3) ◽  
pp. 289-291 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Frank J. Stützler ◽  
Koichi Ishida
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure
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