InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy

1994 ◽  
Vol 65 (14) ◽  
pp. 1748-1750 ◽  
Author(s):  
N. C. Frateschi ◽  
M. Y. Jow ◽  
P. D. Dapkus ◽  
A. F. J. Levi
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

1987 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
R. M. Kolbas ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

1990 ◽  
Vol 57 (14) ◽  
pp. 1437-1439 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
P. D. Dapkus
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

1987 ◽  
Vol 51 (19) ◽  
pp. 1530-1532 ◽  
Author(s):  
S. P. DenBaars ◽  
C. A. Beyler ◽  
A. Hariz ◽  
P. D. Dapkus
Keyword(s):  
Quantum Well ◽  
Active Regions ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

Atomic layer epitaxy for quantum well nitride-based devices

2016 ◽  
Author(s):  
Jennifer Hite ◽  
Neeraj Nepal ◽  
Virginia R. Anderson ◽  
Jaime A. Freitas ◽  
Michael A. Mastro ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy

1990 ◽  
Vol 56 (3) ◽  
pp. 289-291 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Frank J. Stützler ◽  
Koichi Ishida
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure

Growth of InAs and (InAs)1(GaAs)l Superlattice Quantum Well Structures on GaAs by Atomic Layer Epitaxy Using Trimethylindium-Dimethylethylamine Adduct

1993 ◽  
Vol 334 ◽  
Author(s):  
Nobuyuki Ohtsuka ◽  
Osamu Ueda
Keyword(s):  
Quantum Well ◽  
Growth Temperature ◽  
Room Temperature ◽  
Atomic Layer ◽  
High Thermal Stability ◽  
Atomic Layer Epitaxy ◽  
Quantum Well Structures ◽  
Temperature Range ◽  
Short Period ◽  
Thermal Stability Of

AbstractAtomic layer epitaxy (ALE) of InAs has been developed using trimethylindium-dimethylethylamine adduct (TMIDMEA) as a novel In source. Distinct self-limiting growth of InAs was successfully carried out over a wide temperature range from 350°C to 500°C because of the high thermal stability of TMIDMEA. The possible growth temperature range for ALE-InAs was extended by using TM1DMEA. These results lead us to conclude that the use of TMIDMEA enables us to grow InAs/GaAs heterostructures at a single growth temperature. Using this technique, (InAs)1(GaAs)l short period superlattice (12 periods) quantum-well structures were grown on a GaAs(100) substrate at 460°C. A photoluminescence peak at 1.3 µm was observed in these structures at room temperature.

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