GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

1987 ◽  
Vol 51 (19) ◽  
pp. 1530-1532 ◽  
Author(s):  
S. P. DenBaars ◽  
C. A. Beyler ◽  
A. Hariz ◽  
P. D. Dapkus
Keyword(s):  
Quantum Well ◽  
Active Regions ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

1987 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
R. M. Kolbas ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

1990 ◽  
Vol 57 (14) ◽  
pp. 1437-1439 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
P. D. Dapkus
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy

1994 ◽  
Vol 65 (14) ◽  
pp. 1748-1750 ◽  
Author(s):  
N. C. Frateschi ◽  
M. Y. Jow ◽  
P. D. Dapkus ◽  
A. F. J. Levi
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

The Growth of AIGaAs/GaAs Heterostructures By Atomic Layer Epitaxy

1987 ◽  
Vol 102 ◽  
Author(s):  
S. P. Denbaars ◽  
A. Hariz ◽  
C. Beyler ◽  
B. Y. Maa ◽  
Q. Chen ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Active Regions ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
High Quality ◽  
Monolayer Growth ◽  
Low Threshold ◽  
Kinetics Of

ABSTRACTThe kinetics of atomic layer epitaxy (ALE) of GaAs utilizing trimethylgallium and arsine are described. The results show that saturated monolayer growth can be achieved-in the temperature range 445°C -485°C and that high quality materials can be grown.. Hybrid A1GaAs/GaAs heterostructures have been grown utilizing ALE for the active regions and conventional metalorganic chemical vapor deposition (MOCVD) for the confining regions that yield high quality quantum wells and low threshold quantum well lasers.

Atomic layer epitaxy for quantum well nitride-based devices

2016 ◽  
Author(s):  
Jennifer Hite ◽  
Neeraj Nepal ◽  
Virginia R. Anderson ◽  
Jaime A. Freitas ◽  
Michael A. Mastro ◽  
...  
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures
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