Quantum well lasers with active region grown by laser‐assisted atomic layer epitaxy

1990 ◽  
Vol 57 (14) ◽  
pp. 1437-1439 ◽  
Author(s):  
Q. Chen ◽  
J. S. Osinski ◽  
P. D. Dapkus
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

Quantum well lasers with InAs monolayers in the active region grown at low temperature by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 46-49 ◽  
Author(s):  
M.L. Dotor ◽  
J. Meléndez ◽  
P. Huertas ◽  
A. Mazuelas ◽  
M. Garriga ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Active Region ◽  
Quantum Well ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Quantum Well Lasers

InAs/GaAs Quantum Well Lasers Grown By Atomic Layer Epitaxy

1987 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
R. M. Kolbas ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

InGaAs/GaAs quantum well lasers with dry‐etched mirror passivated by vacuum atomic layer epitaxy

1994 ◽  
Vol 65 (14) ◽  
pp. 1748-1750 ◽  
Author(s):  
N. C. Frateschi ◽  
M. Y. Jow ◽  
P. D. Dapkus ◽  
A. F. J. Levi
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy

GaAs/AlGaAs quantum well lasers with active regions grown by atomic layer epitaxy

1987 ◽  
Vol 51 (19) ◽  
pp. 1530-1532 ◽  
Author(s):  
S. P. DenBaars ◽  
C. A. Beyler ◽  
A. Hariz ◽  
P. D. Dapkus
Keyword(s):  
Quantum Well ◽  
Active Regions ◽  
Atomic Layer ◽  
Quantum Well Lasers ◽  
Atomic Layer Epitaxy
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