InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy

1990 ◽  
Vol 56 (3) ◽  
pp. 289-291 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Frank J. Stützler ◽  
Koichi Ishida
1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.


1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair

2021 ◽  
Vol 602 ◽  
pp. 412487
Author(s):  
M. Gunes ◽  
O. Donmez ◽  
C. Gumus ◽  
A. Erol ◽  
H. Alghamdi ◽  
...  

1996 ◽  
Vol 69 (23) ◽  
pp. 3572-3574 ◽  
Author(s):  
M. Momose ◽  
A. Taike ◽  
M. Kawata ◽  
J. Gotoh ◽  
S. Nakatsuka

2010 ◽  
Vol 530 (1) ◽  
pp. 131/[287]-136/[292]
Author(s):  
Jung Soo Park ◽  
Tae Jin Park ◽  
Woo Sik Jeon ◽  
Gyeong Heon Kim ◽  
Jae Hyung Yu ◽  
...  

1990 ◽  
Vol 8 (4) ◽  
pp. 433-437 ◽  
Author(s):  
A. Hameury ◽  
G. Chassaing ◽  
M. Sigrist ◽  
C. Deparis ◽  
J. Massies

1985 ◽  
Vol 24 (Part 2, No. 1) ◽  
pp. L53-L55 ◽  
Author(s):  
Tadaki Miyoshi ◽  
Yoshinobu Aoyagi ◽  
Yusaburo Segawa ◽  
Susumu Namba ◽  
Masahiro Nunoshita

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