Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Measurement of the GaAs/AlAs valence‐band offset from a single quantum well near the Γ‐Xcrossover

1995 ◽  
Vol 77 (9) ◽  
pp. 4541-4543 ◽  
Author(s):  
C. N. Yeh ◽  
L. E. McNeil ◽  
L. J. Blue ◽  
T. Daniels‐Race
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

INSIGHTS ON THE BOUND STATES IN THE STRAINED CdSe–ZnSe SINGLE-QUANTUM WELLS

2008 ◽  
Vol 22 (13) ◽  
pp. 2055-2069 ◽  
Author(s):  
NACIR TIT ◽  
IHAB M. OBAIDAT
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Quantum Confinement ◽  
Bound States ◽  
Axial Strain ◽  
Bound State ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

The bound states in the (CdSe) Nw– ZnSe (001) single quantum well are investigated versus the well width (Nw monolayers) and the valence-band offset (VBO). The calculation, based on the sp3s* tight-binding method which includes the spin-orbit interactions, is employed to calculate the band-gap energy (Eg), quantum-confinement energy (EQ), and band structures. It is found that the studied systems possess a vanishing valence-band offset ( VBO ≃ 0) in consistency with the common-anion rule, and a large conduction band offset of about ( CBO ≃ 1 eV ); both of which made the electronic confinement become predominant. The bi-axial strain, on the other hand, remains to control the hole states. Namely, the two highest (spin-degenerate) hole states are found to localize at the two interfaces due to the formation of two similar strain-induced potential dips at these interfaces, each of depth equal to the strain energy ~35 meV. More importantly, the ultrathin CdSe wells (with Nw ≤ 4 monolayers) are found to contain only a single (spin-degenerate) bound state; but by increasing the well width further, a new (spin-degenerate) bound state falls into the well every time Nw hits a multiple of 4 monolayers (more specifically, for 4n+1 ≤ Nw ≤ 4 (n+1), the number of bound states is (n+1), where n is an integer). The rule governing the variation of the quantum-confinement energy EQ versus the well width Nw has been derived. Our theoretical results are in excellent agreement with the available experimental photoluminescence data.

Ultrathin InAs/GaAs single quantum well structures grown by atomic layer epitaxy

1986 ◽  
Vol 49 (18) ◽  
pp. 1199-1200 ◽  
Author(s):  
M. A. Tischler ◽  
N. G. Anderson ◽  
S. M. Bedair
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures

InGaP/GaAs single quantum well structure growth on GaAs facet walls by chloride atomic layer epitaxy

1990 ◽  
Vol 56 (3) ◽  
pp. 289-291 ◽  
Author(s):  
Akira Usui ◽  
Haruo Sunakawa ◽  
Frank J. Stützler ◽  
Koichi Ishida
Keyword(s):  
Quantum Well ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structure

Measurement of band offset of a strained‐layer single quantum well by a capacitance‐voltage technique

1993 ◽  
Vol 74 (12) ◽  
pp. 7618-7620 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
G. Fernandes ◽  
S. Banerjee
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Strained Layer ◽  
Capacitance Voltage

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

2000 ◽  
Vol 76 (25) ◽  
pp. 3685-3687 ◽  
Author(s):  
J. Hader ◽  
S. W. Koch ◽  
J. V. Moloney ◽  
E. P. O’Reilly
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Valence Band Offset

Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors

1998 ◽  
Vol 43-44 ◽  
pp. 669-676 ◽  
Author(s):  
H Gamez-Cuatzin ◽  
A Daami ◽  
L Garchery ◽  
I Sagnes ◽  
Y Campidelli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Mos Capacitors
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