Experimental Auger Recombination Study of a 2 µm GaSb-Based Quantum Well Laser via Sidewall Spontaneous Emission

2020 ◽  
Author(s):  
X. Li ◽  
H. Wang ◽  
W. Wang ◽  
J. X. B. Sia ◽  
X. Guo ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Auger Recombination ◽  
Quantum Well Laser

GaAs microcavity quantum‐well laser with enhanced coupling of spontaneous emission to the lasing mode

1992 ◽  
Vol 61 (4) ◽  
pp. 393-395 ◽  
Author(s):  
R. J. Horowicz ◽  
H. Heitmann ◽  
Y. Kadota ◽  
Y. Yamamoto
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Lasing Mode ◽  
Quantum Well Laser

scholarly journals Spontaneous emission control in quantum well laser diodes

1998 ◽  
Vol 2 (4) ◽  
pp. 151 ◽  
Author(s):  
Huw Summers ◽  
G. Berry ◽  
Gareth Lewis ◽  
Peter Blood
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Laser Diodes ◽  
Emission Control ◽  
Quantum Well Laser

TUNNEL INJECTION LASERS

1998 ◽  
Vol 09 (04) ◽  
pp. 847-866
Author(s):  
PALLAB BHATTACHARYA
Keyword(s):  
Quantum Well ◽  
High Frequency ◽  
Auger Recombination ◽  
Injection Laser ◽  
Gain Compression ◽  
Carrier Heating ◽  
Hot Carrier ◽  
Quantum Well Laser ◽  
Tunnel Injection ◽  
Carrier Population

Carrier heating in conventional quantum well lasers can lead to several deleterious effects and are related to the transport and thermalization characteristics of injected carriers. The properties of a quantum well laser in which the electrons are directly transported to the lasing subband by tunneling is described here. The resulting device — a tunnel injection laser — is shown to have negligible gain compression, superior high-temperature performance, lower Auger recombination and wavelength chirp, and better high frequency modulation characteristics when compared to conventional lasers. All these improvements are attributed to the reduction of hot-carrier population in the active region of the laser. Results are presented here for lasers made with GaAs — and InP — based heterostructure systems.

Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes

1996 ◽  
Vol 80 (1) ◽  
pp. 582-584 ◽  
Author(s):  
Alexander Schönfelder ◽  
John D. Ralston ◽  
Konrad Czotscher ◽  
Stefan Weisser ◽  
Josef Rosenzweig ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser

2005 ◽  
Author(s):  
Yongqiang Ning ◽  
Yanfang Sung ◽  
Zhenhua Jin ◽  
Lijun Wang
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Quantum Well Laser

scholarly journals Auger Recombination in Quantum Well Laser with Participation of Electrons in Waveguide Region

2018 ◽  
Vol 57 (2) ◽  
pp. 193-198
Author(s):  
A.A. Karpova ◽  
D.M. Samosvat ◽  
A.G. Zegrya ◽  
G.G. Zegrya ◽  
V.E. Bugrov
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Auger Recombination ◽  
Nonradiative Recombination ◽  
Electron Hole ◽  
Quantum Well Laser ◽  
Semiconductor Quantum Wells ◽  
Electron Hole Pair ◽  
Quantum Well Width ◽  
Nonequilibrium Carriers

Abstract A new mechanism of nonradiative recombination of nonequilibrium carriers in semiconductor quantum wells is suggested and discussed. For a studied Auger recombination process the energy of localized electron-hole pair is transferred to barrier carriers due to Coulomb interaction. The analysis of the rate and the coefficient of this process is carried out. It is shown, that there exists two processes of thresholdless and quasithreshold types, and thresholdless one is dominant. The coefficient of studied process is a non-monotonous function of quantum well width having maximum in region of narrow quantum wells. Comparison of this process with CHCC process shows that these two processes of nonradiative recombination are competing in narrow quantum wells, but prevail at different quantum well widths.

Auger recombination in GaInN/GaN quantum well laser structures

2011 ◽  
Vol 99 (3) ◽  
pp. 031106 ◽  
Author(s):  
M. Brendel ◽  
A. Kruse ◽  
H. Jönen ◽  
L. Hoffmann ◽  
H. Bremers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Auger Recombination ◽  
Quantum Well Laser
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