GaAs microcavity quantum‐well laser with enhanced coupling of spontaneous emission to the lasing mode

1992 ◽  
Vol 61 (4) ◽  
pp. 393-395 ◽  
Author(s):  
R. J. Horowicz ◽  
H. Heitmann ◽  
Y. Kadota ◽  
Y. Yamamoto
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Lasing Mode ◽  
Quantum Well Laser

scholarly journals Spontaneous emission control in quantum well laser diodes

1998 ◽  
Vol 2 (4) ◽  
pp. 151 ◽  
Author(s):  
Huw Summers ◽  
G. Berry ◽  
Gareth Lewis ◽  
Peter Blood
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Laser Diodes ◽  
Emission Control ◽  
Quantum Well Laser

Optical gain and spontaneous emission in InGaAs/GaAs multiple quantum well laser diodes

1996 ◽  
Vol 80 (1) ◽  
pp. 582-584 ◽  
Author(s):  
Alexander Schönfelder ◽  
John D. Ralston ◽  
Konrad Czotscher ◽  
Stefan Weisser ◽  
Josef Rosenzweig ◽  
...  
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Multiple Quantum Well ◽  
Laser Diodes ◽  
Optical Gain ◽  
Multiple Quantum ◽  
Quantum Well Laser ◽  
Multiple Quantum Well Laser

Spontaneous emission and gain characteristics of InGaAs/InGaAsP quantum well laser

2005 ◽  
Author(s):  
Yongqiang Ning ◽  
Yanfang Sung ◽  
Zhenhua Jin ◽  
Lijun Wang
Keyword(s):  
Quantum Well ◽  
Spontaneous Emission ◽  
Quantum Well Laser

(InAs)1/(GaAs)2short period superlattice strained single quantum well laser on GaAs substrate

1993 ◽  
Vol 29 (1) ◽  
pp. 98-99 ◽  
Author(s):  
H. Kurakake ◽  
T. Uchida ◽  
H. Soda ◽  
S. Yamazaki
Keyword(s):  
Quantum Well ◽  
Gaas Substrate ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Laser

Band Structure and Optical Gain of 1.3 um GaAsSbN/GaAs Compressively Strained Quantum Well Laser

2007 ◽  
Vol 31 ◽  
pp. 95-97
Author(s):  
B. Dong ◽  
W.J. Fan ◽  
Y.X. Dang
Keyword(s):  
Band Structure ◽  
Quantum Well ◽  
Optical Gain ◽  
Band Structures ◽  
Quantum Well Laser ◽  
Suitable Combination ◽  
Gain Spectra ◽  
Strained Quantum Well

The band structures and optical gain spectra of GaAsSbN/GaAs compressively strained quantum well (QW) were studied using 10-band k.p approach. We found that a higher Sb and N composition in the quantum well and a thicker well give longer emitting wavelength. The result also shows a suitable combination of Sb and N composition, and QW thickness can achieve 1.3 μm lasing. And, the optical gain spectra with different carrier concentrations will be obtained.

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